MRF377 PDF预览

MRF377

更新时间: 2025-08-19 10:47:31
品牌 Logo 应用领域
ASI 晶体晶体管射频
页数 文件大小 规格书
1页 34K
描述
NPN SILICON RF POWER TRANSISTOR

MRF377 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-CDFM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.07配置:SINGLE
最小漏源击穿电压:65 V最大漏极电流 (Abs) (ID):17 A
最大漏极电流 (ID):17 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-CDFM-F4
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):486 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MRF377 数据手册

  
MRF377  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The ASI MRF377 is Designed for  
broadband commercial and industrial  
applications in 470 to 860 MHz band.  
Ideal for large-signal, common source  
amplifier in 32 V digital television  
transmitter equipment.  
PACKAGE STYLE .400 BAL FLG. (C)  
FEATURES:  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
A
.220 / 5.59  
.230 / 5.84  
A
B
C
D
E
F
G
H
I
.080x45°  
B
FULL R  
(4X).060 R  
PG = 16.5 dB min. at 45 W/860 MHz  
η = 21 % Minimum  
.210 / 5.33  
.120 / 3.05  
.380 / 9.65  
.780 / 19.81  
.130 / 3.30  
.390 / 9.91  
.820 / 20.83  
E
M
D
Omnigold™ Metalization System  
C
.435 / 11.05  
1.090 / 27.69  
.1925  
1.335 / 33.91  
.003 / 0.08  
.060 / 1.52  
.082 / 2.08  
1.345 / 34.16  
.007 / 0.18  
.070 / 1.78  
.100 / 2.54  
.205 / 5.21  
.407 / 10.34  
.870 / 22.10  
F
G
H
N
J
I
MAXIMUM RATINGS  
L
K
L
K
J
17.0 A  
65 V  
ID  
.395 / 10.03  
.850 / 21.59  
M
N
VDSS  
VGS  
PDISS  
TJ  
15 V  
486 W @ TC = 25 °C  
-65 °C to +200 °C  
-65 °C to +150 °C  
0.36 °C/W  
TSTG  
θJC  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
VDSS  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
ID = 10 µA  
65  
V
µA  
µA  
V
V
V
V
V
DS = 32 V  
1.0  
1.0  
IDSS  
IGSS  
GS = 5 V  
DS = 10 V  
DS = 32 V  
ID = 200 µA  
ID = 225 mA  
2.8  
3.5  
VGS(th)  
VGS(Q)  
VDS(ON)  
CRSS  
PG  
V
VGS = 10 V  
DS = 28 V  
ID = 3.0 A  
0.27  
3.2  
V
V
f = 1.0 MHz  
pF  
dB  
%
16.5  
21  
18.2  
22.9  
VDD = 32 V  
IDQ = 2 x 1000 mA  
POUT = 45 W  
η
f = 860 MHz  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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