Datasheet > MRF3866

MRF3866

更新时间： 2024-01-16 04:03:59

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管光电二极管放大器
页数	文件大小	规格书
4页	63K
描述
HIGH-FREQUENCY TRANSISTORS NPN SILICON

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技术参数
数据手册

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MRF3866 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	针数：	8
Reach Compliance Code：	compliant	风险等级：	5.57
Is Samacsys：	N	最大集电极电流 (IC)：	0.4 A
配置：	Single	最小直流电流增益 (hFE)：	5
极性/信道类型：	NPN	最大功率耗散 (Abs)：	1 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

MRF3866 数据手册

Order this document

by MRF3866/D

SEMICONDUCTOR TECHNICAL DATA

The RF Line

•

Tape and reel packaging available for MRF3866R2:

R2 suffix = 2,500 units per reel

= 400 mA

HIGH–FREQUENCY

TRANSISTORS

NPN SILICON

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

CEO

CBO

EBO

3.5

0.4

CASE 751–05, STYLE 1

(SO–8)

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T , T

stg

–55 to +150

°C

Maximum Junction Temperature

Jmax

150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

83.3

125

Unit

°C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

θJC

θJA

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Collector–Emitter Breakdown Voltage

3.5

—

Vdc

(BR)CER

(I = 5.0 mAdc, R

= 10 Ω)

Collector–Emitter Sustaining Voltage

(I = 5.0 mAdc, I = 0)

CEO(sus)

Emitter–Base Breakdown Voltage

(I = 100 µAdc, I = 0)

—

Vdc

(BR)EBO

Collector Cutoff Current

(V = 28 Vdc, I = 0)

0.02

mAdc

CEO

Collector Cutoff Current

CEX

= 30 Vdc, V

= 55 Vdc, V

= –1.5 Vdc (Rev.), T = 150°C)

= –1.5 Vdc (Rev.)

—

5.0

0.1

Emitter Cutoff Current

(V = 3.5 Vdc, I = 0)

—

0.1

mAdc

EBO

(continued)

(Replaces MPS3866/D)

MOTOROLA RF DEVICE DATA

Motorola, Inc. 1997

MRF3866R2

12 3 4

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