Datasheet > MRF392

MRF392

更新时间： 2024-01-16 19:55:56

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	18K
描述
NPN SILICON RF POWER TRANSISTOR

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MRF392 数据手册

MRF392

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

PACKAGE STYLE .400 8L FLG

The ASI MRF392 is a Common

Emitter Device Designed for Class A ,

AB and C Amplifier Applications in the

300 - 500 MHz Military

FULL R

Communications Band.

.1925

.125

4 x .060 R

FEATURES INCLUDE:

• Gold Metalization

• Emitter Ballasting

• Input Matching

MINIMUM

inches

MAXIMUM

inches mm

DIM

.030 / 0.76

.360 / 9.14

.130 / 3.30

.115 / 2.92

.065 / 1.65

.380 / 9.65

.125 / 3.18

.075 / 1.91

MAXIMUM RATINGS

.390 / 9.91

.765 / 19.43

.655 / 16.64

.905 / 22.99

.430 / 10.92

.007 / 0.18

.130 / 3.30

.175 / 4.45

.280 / 7.11

.405 / 10.29

16 A

60 V

I_C

V_CB

P_DISS

T_J

.735 / 18.67

.645 / 16.38

.895 / 22.73

.420 / 10.67

.003 / 0.08

.120 / 3.05

.159 / 4.04

270 W @ T_C= 25 °C

-65 °C to +200 °C

-55 °C to +200 °C

.65 °C/W

.395 / 10.03

T_STG

θ_JC

1 = COLLECTOR

2 = EMITTER

3 = BASE

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CEO

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 50 mA

I_E= 5.0 Ma

BV_CES

BV_EBO

I_CBO

4.0

V_CB= 30 V

5.0

V_CB= 28 V

f = 1.0 MHz

C_ob

_CE= 5.0 V

_CE= 28 V

I_C= 1.0 A

100

h_FE

G_pe

---

8.0

8.5

P_out= 125 W

f = 400 MHz

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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