Datasheet > MRF377HR3_09

MRF377HR3_09

更新时间： 2024-01-06 14:07:14

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
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描述
RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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MRF377HR3_09 数据手册

Document Number: MRF377H

Rev. 2, 3/2009

Freescale Semiconductor

Technical Data

RF Power Field-Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with frequen-

cies from 470 to 860 MHz. The high gain and broadband performance of these

devices make them ideal for large-signal, common source amplifier applications

in 32 volt digital television transmitter equipment.

MRF377HR3

• Typical Broadband DVBT OFDM Performance @ 470-860 MHz, 32 Volts,

_DQ= 2000 mA, 8K Mode, 64 QAM

Output Power — 45 Watts Avg.

Power Gain ≥ 16.7 dB

470 - 860 MHz, 45 W AVG., 32 V

LATERAL N-CHANNEL

RF POWER MOSFET

Drain Efficiency ≥ 21%

ACPR ≤ -58 dBc

• Typical Broadband ATSC 8VSB Performance @ 470-860 MHz, 32 Volts,

_DQ= 2000 mA

Output Power — 80 Watts Avg.

Power Gain ≥ 16.5 dB

Drain Efficiency ≥ 27.5%

IMD ≥ -31.3 dBc

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Device Designed for Push-Pull Operation Only

• Integrated ESD Protection

CASE 375G-04, STYLE 1

NI-860C3

• Excellent Thermal Stability

• Lower Thermal Resistance Package

• Low Gold Plating Thickness on Leads, 40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

- 0.5, +65

- 0.5, +15

Unit

Vdc

Adc

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

648

3.7

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

CW Operation @ T = 25°C

Derate above 25°C

235

1.38

W/°C

Table 2. Thermal Characteristics

(1,2)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 81°C, 105 W CW

Case Temperature 77°C, 45 W CW

°C/W

0.27

0.29

1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF377HR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...14

中文翻译

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与MRF377HR3_09相关器件

型号	品牌	获取价格	描述	数据表
MRF377HR5	FREESCALE	获取价格	N-Channel Enhancement-Mode Lateral MOSFETs
MRF377R3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTOR
MRF377R5	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTOR
MRF3866	MICROSEMI	获取价格	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF3866	ASI	获取价格	NPN SILICON RF TRANSISTOR
MRF3866	ADPOW	获取价格	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF3866	MOTOROLA	获取价格	HIGH-FREQUENCY TRANSISTORS NPN SILICON
MRF3866G	ADPOW	获取价格	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF3866G	MICROSEMI	获取价格	Transistor
MRF3866GR1	MICROSEMI	获取价格	Transistor

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