MRF377H
Rev. 0, 1/2005
Freescale Semiconductor
Technical Data
RF Power Field-Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
MRF377HR3
MRF377HR5
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common source amplifier applications
in 32 volt digital television transmitter equipment.
• Typical Broadband DVBT OFDM Performance @ 470-860 MHz, 32 Volts,
I
DQ = 2.0 A, 8K Mode, 64 QAM
Output Power — 45 Watts Avg.
Power Gain ≥ 16.7 dB
Efficiency ≥ 21%
470 - 860 MHz, 240 W, 32 V
LATERAL N-CHANNEL
RF POWER MOSFETs
ACPR ≤ -58 dBc
• Typical Broadband ATSC 8VSB Performance @ 470-860 MHz, 32 Volts,
I
DQ = 2.0 A
Output Power — 80 Watts Avg.
Power Gain ≥ 16.5 dB
Efficiency ≥ 27.5%
IMD ≤ -31.3 dBc
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts DVBT
OFDM Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Input and Output Matched for Ease of Use
• Integrated ESD Protection
• Excellent Thermal Stability
• Lower Thermal Resistance Package
CASE 375G-04, STYLE 1
NI-860C3
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings (1)
Rating
Symbol
Value
- 0.5, +65
- 0.5, +15
17
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
V
Vdc
Vdc
Adc
DSS
V
GS
I
D
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
648
3.7
W
W/°C
C
D
Storage Temperature Range
Operating Junction Temperature
T
- 65 to +150
200
°C
°C
stg
T
J
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 105 W CW
Case Temperature 77°C, 45 W CW
R
θ
JC
°C/W
0.27
0.29
1. Each side of device measured separately.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
3. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRF377HR3 MRF377HR5
RF Device Data
Freescale Semiconductor
1