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MRF3866 PDF预览

MRF3866

更新时间: 2024-01-03 16:46:03
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管射频微波光电二极管放大器
页数 文件大小 规格书
5页 172K
描述
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF3866 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.78最大集电极电流 (IC):0.4 A
基于收集器的最大容量:2 pF集电极-发射极最大电压:30 V
配置:Single最小直流电流增益 (hFE):5
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G8
JESD-609代码:e0元件数量:1
端子数量:8封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):1000 MHzBase Number Matches:1

MRF3866 数据手册

 浏览型号MRF3866的Datasheet PDF文件第2页浏览型号MRF3866的Datasheet PDF文件第3页浏览型号MRF3866的Datasheet PDF文件第4页浏览型号MRF3866的Datasheet PDF文件第5页 
140 COMMERCE DRIVE  
MONTGOMERYVILLE, PA  
18936-1013  
PHONE: (215) 631-9840  
FAX: (215) 631-9855  
MRF3866, R1, R2  
RF & MICROWAVE DISCRETE  
LOW POWER TRANSISTORS  
Features  
·
·
·
·
Low Cost SO-8 Plastic Surface Mount Package.  
S-Parameter Characterization  
Tape and Reel Packaging Options Available  
Maximum Available Gain = 17 dB @ 300 MHz  
SO-8  
R1 suffix–Tape and Reel, 500 units  
R2 suffix–Tape and Reel, 2500 units  
DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Parameter  
Value  
30  
Unit  
Vdc  
Vdc  
Vdc  
mA  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
55  
3.5  
400  
Thermal Data  
P
D
Total Device Dissipation @ TC = 25ºC  
Derate above 25ºC  
1.0  
8
Watts  
mW/ ºC  
MSC1312.PDF 10-25-99  

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