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MRF3866R2G PDF预览

MRF3866R2G

更新时间: 2024-02-25 07:16:06
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管射频微波光电二极管放大器
页数 文件大小 规格书
6页 147K
描述
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MRF3866R2G 数据手册

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MRF581  
MRF581G  
MRF581A  
MRF581AG  
*G Denotes RoHS Compliant, Pb free Terminal Finish  
RF & MICROWAVE DISCRETE  
LOW POWER TRANSISTORS  
Features  
Low Noise - 2.5 dB @ 500 MHZ  
Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz  
Ftau - 5.0 GHz @ 10v, 75mA  
Cost Effective MacroX Package  
Macro X  
DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Parameter  
MRF581  
MRF581A  
Unit  
Vdc  
Vdc  
Vdc  
mA  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
18  
15  
30  
2.5  
200  
Thermal Data  
P
Total Device Dissipation @ TC = 50ºC  
Derate above 50ºC  
2.5  
25  
Watts  
mW/ ºC  
D
P
Total Device Dissipation @ TC = 25ºC  
Derate above 25ºC  
1.25  
10  
Watts  
mW/ ºC  
D
Storage Junction Temperature Range  
Tstg  
-65 to +150  
150  
ºC  
ºC  
Maximum Junction Temperature  
TJmax  
Revision A- December 2008  
Microsemi reserves the right to change, without notice, the specifications and information contained herein  
Visit our website at www.microsemi.com or contact our factory direct.  

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