Datasheet > MRF377R3

MRF377R3

更新时间： 2024-02-22 11:28:53

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管射频放大器局域网
页数	文件大小	规格书
12页	1032K
描述
RF POWER FIELD EFFECT TRANSISTOR

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MRF377R3 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
Reach Compliance Code：	unknown	风险等级：	5.76
配置：	Single	最大漏极电流 (Abs) (ID)：	17 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	200 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	486 W	子类别：	FET General Purpose Power
Base Number Matches：	1

MRF377R3 数据手册

ꢓ

ꢔ

ꢏ

ꢔ

ꢀ

ꢔ

ꢕ

ꢖ

Freescale Semiconductor, Inc.

Order this document

by MRF377/D

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

ꢀ ꢁ ꢂ ꢃꢄ ꢅ ꢆ ꢁꢇꢅ ꢈꢉ ꢊ ꢋ ꢌꢌ ꢅꢍ ꢎ ꢏꢆ ꢐꢑ ꢒ ꢇꢒ ꢎꢃ ꢆ

N–Channel Enhancement–Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with frequen-

cies from 470 to 860 MHz. The high gain and broadband performance of this

device make it ideal for large–signal, common source amplifier applications in 32

volt digital television transmitter equipment.

ꢓ ꢀꢁ ꢗ ꢘꢘ

ꢓ

ꢀ

ꢁ

ꢗ

ꢘ

ꢀ

ꢗ

ꢓ

ꢀ

ꢁ

ꢗ

ꢘ

ꢀ

ꢙ

• Typical Broadband DVBT OFDM Performance @ 470–860 MHz, 32 Volts,

470 – 860 MHz, 240 W, 32 V

LATERAL N–CHANNEL

RF POWER MOSFET

_DQ= 2.0 A, 8K Mode, 64 QAM

Output Power — 45 Watts Avg.

Power Gain ≥ 16.7 dB

Efficiency ≥ 21%

ACPR ≤ –58 dBc

• Typical Broadband ATSC 8VSB Performance @ 470–860 MHz, 32 Volts,

I_DQ= 2.0 A

Output Power — 80 Watts Avg.

Power Gain ≥ 16.5 dB

Efficiency ≥ 27.5%

IMD ≤ –31.3 dBc

• Internally Input and Output Matched for Ease of Use

• Integrated ESD Protection

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts DVBT

CASE 375G–04, STYLE 1

NI–860C3

OFDM Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

R5 Suffix = 50 Units per 56 mm, 13 inch Reel.

MAXIMUM RATINGS ⁽¹⁾

Rating

Symbol

Value

Unit

Drain–Source Voltage

Gate–Source Voltage

Drain Current – Continuous

DSS

Vdc

Adc

– 0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

486

2.78

W/°C

Storage Temperature Range

Operating Junction Temperature

– 65 to +150

200

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

0.36

°C/W

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

1 (Minimum)

M3 (Minimum)

7 (Minimum)

Machine Model

Charge Device Model

(1) Each side of device measured separately.

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 0

MOTOROLA RF DEVICE DATA

MRF377 MRF377R3 MRF377R5

 Motorola, Inc. 2003

For More Information On This Product,

Go to: www.freescale.com

12 3 4 5 6 7...12

中文翻译

下载PDF

与MRF377R3相关器件

型号	品牌	获取价格	描述	数据表
MRF377R5	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTOR
MRF3866	MICROSEMI	获取价格	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF3866	ASI	获取价格	NPN SILICON RF TRANSISTOR
MRF3866	ADPOW	获取价格	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF3866	MOTOROLA	获取价格	HIGH-FREQUENCY TRANSISTORS NPN SILICON
MRF3866G	ADPOW	获取价格	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF3866G	MICROSEMI	获取价格	Transistor
MRF3866GR1	MICROSEMI	获取价格	Transistor
MRF3866GR2	MICROSEMI	获取价格	Transistor
MRF3866R1	MICROSEMI	获取价格	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

与MRF377R3相关文章

一文带你了解DS28E40主要特征、安全特性、应用场景
2024-07-30

29
RT9172资料手册解读：关节特性、引脚信息、参数说明
2024-07-30

29
一文带你了解SM8760CA资料：主要参数特征
2024-07-30

30
解读MAX3238ECPW：一款多通道RS-232线驱动/接收器
2024-07-30

37

产品中心

服务支持

精选活动

关于我们

帮助中心

MRF377R3

MRF377R3 技术参数

MRF377R3 数据手册

与MRF377R3相关器件

与MRF377R3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MRF377R3

MRF377R3 技术参数

MRF377R3 数据手册

与MRF377R3相关器件

与MRF377R3相关文章

您还可以找

您在本页遇到什么问题？