MRF3866

更新时间： 2024-02-14 06:17:06

品牌	Logo	应用领域
ADPOW		晶体晶体管射频微波光电二极管放大器
页数	文件大小	规格书
5页	126K
描述
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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中文翻译

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数据手册

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MRF3866 数据手册

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

MRF3866, R1, R2

MRF3866G, R1, R2

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

* G Denotes RoHS Compliant, Pb Free Terminal Finish

Features

Low Cost SO-8 Plastic Surface Mount Package.

S-Parameter Characterization

Tape and Reel Packaging Options Available

Maximum Available Gain = 17 dB @ 300 MHz

SO-8

R1 suffix–Tape and Reel, 500 units

R2 suffix–Tape and Reel, 2500 units

DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

V_CEO

V_CBO

V_EBO

I_C

Parameter

Value

Unit

Vdc

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

3.5

400

Thermal Data

Total Device Dissipation @ TC = 25ºC

Derate above 25ºC

1.0

Watts

mW/ ºC

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

Rev A 9/2005

12 3 4 5

中文翻译

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与MRF3866相关器件

型号	品牌	获取价格	描述	数据表
MRF3866G	ADPOW	获取价格	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF3866G	MICROSEMI	获取价格	Transistor
MRF3866GR1	MICROSEMI	获取价格	Transistor
MRF3866GR2	MICROSEMI	获取价格	Transistor
MRF3866R1	MICROSEMI	获取价格	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF3866R1	MOTOROLA	获取价格	RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Ultra High Frequency Band, Silic
MRF3866R1G	MICROSEMI	获取价格	Transistor
MRF3866R2	MICROSEMI	获取价格	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF3866R2G	MICROSEMI	获取价格	暂无描述
MRF390	MOTOROLA	获取价格	RF Power Bipolar Transistor, 2-Element, Ultra High Frequency Band, Silicon, NPN