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MRF373A PDF预览

MRF373A

更新时间: 2024-02-15 20:59:43
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体射频场效应晶体管功率场效应晶体管放大器局域网
页数 文件大小 规格书
8页 481K
描述
RF Power Field Effect Transistors

MRF373A 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:FLATPACK, R-CDFP-F2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.64
Is Samacsys:N外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:65 V
最大漏极电流 (Abs) (ID):7 A最大漏极电流 (ID):7 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-CDFP-F2JESD-609代码:e0
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLATPACK峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MRF373A 数据手册

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Freescale Semiconductor, Inc.  
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MRF373A/D  
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