Datasheet > MRF255PHT

MRF255PHT

更新时间： 2024-11-19 22:35:39

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
4页	99K
描述
RF Power Field-Effect Transistor

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数据手册

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MRF255PHT 数据手册

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SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

N–Channel Enhancement–Mode

CASE 211–11, STYLE 2

RFC1

C15

C16

C17

DUT

C14

OUTPUT

INPUT

C10

C11

C12

C1 — 470 pF, Chip Capacitor

C2, C3, C11, C12 — 20–200 pF, Trimmer, ARCO #464

C4 — 100 pF, Chip Capacitor

C5, C17 — 100 µF, 15 V, Electrolytic

C6 — 0.001 µF, Disc Ceramic

C7, C8, C9, C10 — 330 pF, Chip Capacitor

C14 — 1200 pF, ATC Chip Capacitor

C15 — 910 pF, 500 V, Dipped Mica

C16 — 47 µF, 16 V, Electrolytic

L1 — 8 Turns, #20 AWG, 0.126″ ID

L2 — 5 Turns, #18 AWG, 0.142″ ID

L3 — 3 Turns, #20 AWG, 0.102″ ID

L4 — 7 Turns, #24 AWG, 0.070″ ID

L5 — 6.5 Turns, #18 AWG, 0.230″ ID, 0.5″ Long

N1, N2 — Type N Flange Mount

RFC1 — Ferroxcube VK–200–19/4B

R1 — 39 kΩ, 1/4 W Carbon

R2 — 150 Ω, 1/4 W Carbon

Board — G–10 .060″

Figure 1. 54 MHz Linear RF Test Circuit Electrical Schematic

Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling

and packaging MOS devices should be observed.

REV 1

MOTOROLA RF DEVICE DATA

Motorola, Inc. 1996

MRF255 PHOTOMASTER

12 3 4

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