Datasheet > MRF19060S

MRF19060S

更新时间： 2024-11-14 14:53:55

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
8页	583K
描述
TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391BVAR

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技术参数
数据手册

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MRF19060S 技术参数

是否无铅：	不含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.89	Base Number Matches：	1

MRF19060S 数据手册

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Freescale Semiconductor, Inc.

Order this document

by MRF19060/D

The RF MOSFET Line

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF19060R3

MRF19060SR3

Designed for PCN and PCS base station applications with frequencies from

1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier

applications.

• Typical CDMA Performance: 1960 MHz, 26 Volts

IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13

Output Power — 7.5 Watts

1990 MHz, 60 W, 26 V

LATERAL N-CHANNEL

RF POWER MOSFETs

Power Gain — 12.5 dB

Adjacent Channel Power —

885 kHz: -47 dBc @ 30 kHz BW

1.25 MHz: -55 dBc @ 12.5 kHz BW

2.25 MHz: -55 dBc @ 1 MHz BW

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 60 Watts CW

CASE 465-06, STYLE 1

NI-780

Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.

MRF19060R3

CASE 465A-06, STYLE 1

NI-780S

MRF19060SR3

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

180

1.03

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +150

200

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Value

Unit

0.97

°C/W

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

Machine Model

1 (Minimum)

M3 (Minimum)

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 6

MOTOROLA RF DEVICE DATA

MRF19060R3 MRF19060SR3

 Motorola, Inc. 2004

For More Information On This Product,

Go to: www.freescale.com

12 3 4 5 6 7 8

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与MRF19060S相关器件

型号	品牌	获取价格	描述	数据表
MRF19060SR3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF19085	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF19085	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF19085LR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF19085LR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF19085LS	MOTOROLA	获取价格	L BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 465A-06, 3 PIN
MRF19085LSR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF19085LSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF19085R3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF19085S	MOTOROLA	获取价格	L BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 465A-06, 3 PIN

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