5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 射频场效应晶体管> MRF19085LSR3
MRF19085LSR3 PDF预览

MRF19085LSR3

更新时间： 2024-11-14 22:31:19
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体射频场效应晶体管功率场效应晶体管放大器
页数 文件大小 规格书
12页 585K
描述
RF Power Field Effect Transistors

阅读下载

中文翻译

获取价格

MRF19085LSR3 技术参数

生命周期：Transferred包装说明：FLATPACK, R-CDFP-F2
针数：2Reach Compliance Code：unknown
风险等级：5.06Is Samacsys：N
外壳连接：SOURCE配置：SINGLE
最小漏源击穿电压：65 VFET 技术：METAL-OXIDE SEMICONDUCTOR
最高频带：L BANDJESD-30 代码：R-CDFP-F2
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：200 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：FLATPACK极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：273 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
Base Number Matches：1

MRF19085LSR3 数据手册

 浏览型号MRF19085LSR3的Datasheet PDF文件第2页浏览型号MRF19085LSR3的Datasheet PDF文件第3页浏览型号MRF19085LSR3的Datasheet PDF文件第4页浏览型号MRF19085LSR3的Datasheet PDF文件第5页浏览型号MRF19085LSR3的Datasheet PDF文件第6页浏览型号MRF19085LSR3的Datasheet PDF文件第7页 
MOTOROLA  
SEMICONDUCTOR TECHNICAL DATA  
Freescale Semiconductor, Inc.  
Order this document  
by MRF19085/D  
The RF MOSFET Line  
RF Power Field Effect Transistors  
N-Channel Enhancement-Mode Lateral MOSFETs  
Designed for PCN and PCS base station applications with frequencies from  
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier  
applications.  
MRF19085R3  
MRF19085LR3  
MRF19085SR3  
MRF19085LSR3  
• Typical 2-Carrier N-CDMA Performance for VDD = 26 Volts,  
I
DQ = 850 mA, Pout = 18 Watts Avg., f1 = 1960 MHz, f2 = 1962.5 MHz  
IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)  
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured  
over a 30 kHz Bandwidth at f1 -885 Khz and f2 +885 kHz. Distortion  
Products Measured over 1.2288 MHz Bandwidth at f1 -2.5 MHz and  
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.  
Output Power — 18 Watts Avg.  
1990 MHz, 90 W, 26 V  
LATERAL N-CHANNEL  
RF POWER MOSFETs  
Power Gain — 13.0 dB  
Efficiency — 23%  
ACPR — -51 dB  
IM3 — -36.5 dBc  
• Internally Matched, Controlled Q, for Ease of Use  
• High Gain, High Efficiency and High Linearity  
• Integrated ESD Protection  
CASE 465-06, STYLE 1  
NI-780  
MRF19085R3,MRF19085LR3  
• Designed for Maximum Gain and Insertion Phase Flatness  
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 90 Watts CW  
Output Power  
• Excellent Thermal Stability  
• Characterized with Series Equivalent Large-Signal Impedance Parameters  
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates  
40µ″ Nominal.  
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.  
CASE 465A-06, STYLE 1  
NI-780S  
MRF19085SR3, MRF19085LSR3  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
65  
Unit  
Vdc  
Vdc  
Drain-Source Voltage  
Gate-Source Voltage  
V
DSS  
V
-0.5, +15  
GS  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
273  
1.56  
Watts  
W/°C  
C
D
Storage Temperature Range  
Operating Junction Temperature  
T
- 65 to +150  
200  
°C  
°C  
stg  
T
J
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Value (1)  
Unit  
Thermal Resistance, Junction to Case  
R
θ
JC  
0.79  
°C/W  
ESD PROTECTION CHARACTERISTICS  
Test Conditions  
Class  
Human Body Model  
Machine Model  
1 (Minimum)  
M3 (Minimum)  
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.  
Select Documentation/Application Notes - AN1955.  
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
REV 6  
Motorola, Inc. 2004  
For More Information On This Product,  
Go to: www.freescale.com  
 
1234567...12

中文翻译

下载PDF

与MRF19085LSR3相关器件

型号 品牌 获取价格 描述 数据表
MRF19085R3 MOTOROLA

获取价格

 		RF Power Field Effect Transistors
MRF19085S MOTOROLA

获取价格

 		L BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 465A-06, 3 PIN
MRF19085SR3 MOTOROLA

获取价格

 		RF Power Field Effect Transistors
MRF19090 MOTOROLA

获取价格

 		RF POWER FIELD EFFECT TRANSISTORS
MRF19090 FREESCALE

获取价格

 		RF Power Field Effect Transistors
MRF19090R3 FREESCALE

获取价格

 		RF Power Field Effect Transistors
MRF19090S MOTOROLA

获取价格

 		RF POWER FIELD EFFECT TRANSISTORS
MRF19090SR3 MOTOROLA

获取价格

 		RF POWER FIELD EFFECT TRANSISTORS
MRF19090SR3 FREESCALE

获取价格

 		RF Power Field Effect Transistors
MRF19120 MOTOROLA

获取价格

 		RF POWER FIELD EFFECT TRANSISTORS

与MRF19085LSR3相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证