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MRF1946 PDF预览

MRF1946

更新时间: 2024-11-14 22:45:59
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体射频双极晶体管放大器局域网
页数 文件大小 规格书
6页 145K
描述
RF POWER TRANSISTORS NPN SILICON

MRF1946 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:FLANGE MOUNT, O-CRFM-F4针数:4
Reach Compliance Code:unknownHTS代码:8541.29.00.95
风险等级:5.03Is Samacsys:N
其他特性:WITH EMITTER BALLASTING RESISTOR最大集电极电流 (IC):8 A
基于收集器的最大容量:100 pF集电极-发射极最大电压:16 V
配置:SINGLE最小直流电流增益 (hFE):40
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:O-CRFM-F4
JESD-609代码:e0元件数量:1
端子数量:4最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):100 W
最小功率增益 (Gp):10 dB认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子位置:RADIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MRF1946 数据手册

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Order this document  
by MRF1946/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF Line  
. . . designed for 12.5 volt large–signal power amplifiers in commercial and  
industrial equipment.  
High Common Emitter Power Gain  
Specified 12.5 V, 175 MHz Performance  
Output Power = 30 Watts  
Power Gain = 10 dB  
30 W, 136220 MHz  
RF POWER  
TRANSISTORS  
NPN SILICON  
Efficiency = 60%  
Diffused Emitter Resistor Ballasting  
Characterized to 220 MHz  
Load Mismatch at High Line and Overdrive Conditions  
MAXIMUM RATINGS  
Rating  
CASE 211–07, STYLE 1  
MRF1946  
Symbol  
Value  
16  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current — Continuous  
V
CEO  
V
CBO  
V
EBO  
36  
4.0  
8.0  
I
C
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
100  
0.57  
Watts  
W/°C  
A
Storage Temperature Range  
Junction Temperature  
T
65 to +150  
200  
°C  
°C  
stg  
CASE 145A–09, STYLE 1  
MRF1946A  
T
J
THERMAL CHARACTERISTICS  
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Max  
Unit  
R
1.75  
°C/W  
θJC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(I = 25 mAdc, I = 0)  
V
16  
36  
4.0  
Vdc  
Vdc  
(BR)CEO  
C
B
Collector–Emitter Breakdown Voltage  
(I = 25 mAdc, V = 0)  
V
(BR)CES  
(BR)EBO  
C
BE  
Emitter–Base Breakdown Voltage  
(I = 5.0 mAdc, I = 0)  
V
Vdc  
E
C
Collector Cutoff Current  
(V = 15 Vdc, V = 0, T = 25°C)  
I
5.0  
mAdc  
CES  
CE BE  
C
ON CHARACTERISTICS  
DC Current Gain  
(I = 1.0 Adc, V  
C CE  
h
FE  
40  
75  
150  
= 5.0 Vdc)  
(continued)  
REV 6  
Motorola, Inc. 1994  

MRF1946 替代型号

型号 品牌 替代类型 描述 数据表
MRF1946 ASI

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