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MRF19120

更新时间： 2024-11-14 22:45:59

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
12页	349K
描述
RF POWER FIELD EFFECT TRANSISTORS

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MRF19120 数据手册

ꢒ ꢓꢎ ꢓ ꢀꢓ ꢔꢕ

SEMICONDUCTOR TECHNICAL DATA

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by MRF19120/D

The RF Sub–Micron MOSFET Line

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N–Channel Enhancement–Mode Lateral MOSFETs

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Designed for CDMA base station applications with frequencies from 1930 to

1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.

1990 MHz, 120 W, 26 V

LATERAL N–CHANNEL

RF POWER MOSFETs

• CDMA Performance @ 1990 MHz, 26 Volts

IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13

885 kHz — –47 dBc @ 30 kHz BW

1.25 MHz — –55 dBc @ 12.5 kHz BW

2.25 MHz — –55 dBc @ 1 MHz BW

Output Power — 15 Watts (Avg.)

Power Gain — 11.7 dB

Efficiency — 16%

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency, High Linearity

• Integrated ESD Protection

CASE 375D–04, STYLE 1

• Designed for Maximum Gain and Insertion Phase Flatness

NI–1230

MRF19120

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1990 MHz, 120 Watts (CW)

Output Power

• S–Parameter Characterization at High Bias Levels

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters

CASE 375E–03, STYLE 1

NI–1230S

MRF19120S

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain–Source Voltage

Gate–Source Voltage

DSS

–0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

389

2.22

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

–65 to +150

200

°C

stg

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

Machine Model

1 (Minimum)

M3 (Minimum)

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

0.45

°C/W

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 5

MOTOROLA RF DEVICE DATA

MRF19120 MRF19120S

 Motorola, Inc. 2002

12 3 4 5 6 7...12

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与MRF19120相关器件

型号	品牌	获取价格	描述	数据表
MRF19120S	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF19125	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF19125	MOTOROLA	获取价格	RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs
MRF19125R3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF19125S	MOTOROLA	获取价格	RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs
MRF19125SR3	MOTOROLA	获取价格	RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs
MRF19125SR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF1946	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR
MRF1946	MOTOROLA	获取价格	RF POWER TRANSISTORS NPN SILICON
MRF1946A	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR

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