Datasheet > MRF20030R

MRF20030R

更新时间： 2024-02-23 21:29:01

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
8页	90K
描述
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, CASE 395C-01, 3 PIN

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MRF20030R 技术参数

生命周期：	Transferred	包装说明：	CASE 395C-01, 3 PIN
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.65	外壳连接：	EMITTER
最大集电极电流 (IC)：	4 A	集电极-发射极最大电压：	25 V
配置：	SINGLE	最高频带：	L BAND
JESD-30 代码：	R-CDFM-F2	元件数量：	1
端子数量：	2	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	FLAT
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	Base Number Matches：	1

MRF20030R 数据手册

Order this document

by MRF20030R/D

SEMICONDUCTOR TECHNICAL DATA

The RF Sub–Micron Bipolar Line

Designed for broadband commercial and industrial applications at frequen-

cies from 1800 to 2000 MHz. The high gain and broadband performance of this

device makes it ideal for large–signal, common–emitter class AB amplifier

applications. Suitable for frequency modulated, amplitude modulated and

multi–carrier base station RF power amplifiers.

30 W, 2.0 GHz

NPN SILICON

BROADBAND

•

Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics

Output Power — 30 Watts (PEP)

Power Gain — 9.8 dB

RF POWER TRANSISTOR

Efficiency — 34%

Intermodulation Distortion — –28 dBc

•

Typical 26 Volts, 1.88 GHz, Class AB, CW Characteristics

Output Power — 30 Watts

Power Gain — 11 dB

Efficiency — 40%

Intermodulation Distortion — –30 dBc

CASE 395C–01, STYLE 1

•

Excellent Thermal Stability

Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 30 Watts (PEP)

Output Power

•

Characterized with Series Equivalent Large–Signal Impedance Parameters

S–Parameter Characterization at High Bias Levels

Designed for FM, TDMA, CDMA, and Multi–Carrier Applications

Note: Not suitable for class A operation.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Adc

Collector–Emitter Voltage

CEO

Collector–Emitter Voltage

Collector–Base Voltage

CES

CBO

CER

Collector–Emitter Voltage (R

Emitter–Base Voltage

= 100 Ω)

–3

Collector Current – Continuous

Total Device Dissipation @ T = 25°C

Derate above 25°C

125

0.71

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

THERMAL CHARACTERISTICS

– 65 to +150

200

°C

stg

Rating

(1)

Symbol

Max

Unit

Thermal Resistance, Junction to Case

(1) Thermal resistance is determined under specified RF operating condition.

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

1.4

°C/W

θJC

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I = 25 mAdc, I = 0)

—

Vdc

(BR)CEO

Collector–Emitter Breakdown Voltage

(I = 25 mAdc, V = 0)

(BR)CES

Collector–Base Breakdown Voltage

(I = 25 mAdc, I = 0)

(BR)CBO

REV 1

(Replaces MRF20030/D)

MOTOROLA RF DEVICE DATA

Motorola, Inc. 1999

MRF20030R

12 3 4 5 6 7 8

中文翻译

下载PDF

与MRF20030R相关器件

型号	品牌	获取价格	描述	数据表
MRF2005	MOTOROLA	获取价格	Transistor
MRF20060	MOTOROLA	获取价格	RF POWER BROADBAND NPN BIPOLAR
MRF20060R	NXP	获取价格	L BAND, Si, NPN, RF POWER TRANSISTOR, CASE 451-06, 3 PIN
MRF20060S	MOTOROLA	获取价格	RF POWER BROADBAND NPN BIPOLAR
MRF2010	MOTOROLA	获取价格	Transistor
MRF2010M	MOTOROLA	获取价格	RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN, CASE 337-02, 3 PIN
MRF206	NKK	获取价格	Half-Inch Diameter Process Sealed Rotaries
MRF206-A	NKK	获取价格	Half-Inch Diameter Process Sealed Rotaries
MRF206-AA	NKK	获取价格	Half-Inch Diameter Process Sealed Rotaries
MRF206-AB	NKK	获取价格	Half-Inch Diameter Process Sealed Rotaries

与MRF20030R相关文章

一文带你了解DS28E40主要特征、安全特性、应用场景
2024-07-30

31
RT9172资料手册解读：关节特性、引脚信息、参数说明
2024-07-30

31
一文带你了解SM8760CA资料：主要参数特征
2024-07-30

32
解读MAX3238ECPW：一款多通道RS-232线驱动/接收器
2024-07-30

39

产品中心

服务支持

精选活动

关于我们

帮助中心

MRF20030R

MRF20030R 技术参数

MRF20030R 数据手册

与MRF20030R相关器件

与MRF20030R相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MRF20030R

MRF20030R 技术参数

MRF20030R 数据手册

与MRF20030R相关器件

与MRF20030R相关文章

您还可以找

您在本页遇到什么问题？