Datasheet > MRF19125SR3

MRF19125SR3

更新时间： 2024-11-15 04:39:07

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频放大器
页数	文件大小	规格书
12页	416K
描述
RF Power Field Effect Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MRF19125SR3 数据手册

Document Number: MRF19125

Rev. 6, 4/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for PCN and PCS base station applications with frequencies from

1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

applications.

MRF19125R3

MRF19125SR3

• Typical 2-Carrier N-CDMA Performance for V_DD= 26 Volts,

I_DQ= 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz

IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)

1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured

over a 30 kHz Bandwidth at f1 -885 kHz and f2 +885 kHz. Distortion

Products Measured over 1.2288 MHz Bandwidth at f1 -2.5 MHz and

f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.

Output Power — 24 Watts Avg.

1930-1990 MHz, 125 W, 26 V

LATERAL N-CHANNEL

RF POWER MOSFETs

Power Gain — 13.6 dB

Efficiency — 22%

ACPR — -51 dB

IM3 — -37.0 dBc

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 125 Watts CW

Output Power

Features

• Internally Matched for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

CASE 465B-03, STYLE 1

NI-880

MRF191225R3

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465C-02, STYLE 1

NI-880S

MRF19125SR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +65

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

330

1.89

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

0.53

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

Machine Model

2 (Minimum)

M3 (Minimum)

MRF19125R3 MRF19125SR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

中文翻译

下载PDF

与MRF19125SR3相关器件

型号	品牌	获取价格	描述	数据表
MRF1946	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR
MRF1946	MOTOROLA	获取价格	RF POWER TRANSISTORS NPN SILICON
MRF1946A	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR
MRF1946A	MOTOROLA	获取价格	RF POWER TRANSISTORS NPN SILICON
MRF1980	MOTOROLA	获取价格	RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel
MRF1980S	MOTOROLA	获取价格	2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 375E-01, 5 PIN
MRF1AMMO	BEL	获取价格	暂无描述
MRF1K50GN	NXP	获取价格	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs
MRF1K50H	NXP	获取价格	1500W RF Power Transistor Sets New Benchmark
MRF1K50HR5	NXP	获取价格	1500W RF Power Transistor Sets New Benchmark