Datasheet > MRF19125SR3

MRF19125SR3

更新时间： 2024-10-01 04:39:07

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频放大器
页数	文件大小	规格书
12页	416K
描述
RF Power Field Effect Transistors

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MRF19125SR3 数据手册

Document Number: MRF19125

Rev. 6, 4/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for PCN and PCS base station applications with frequencies from

1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

applications.

MRF19125R3

MRF19125SR3

• Typical 2-Carrier N-CDMA Performance for V_DD= 26 Volts,

I_DQ= 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz

IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)

1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured

over a 30 kHz Bandwidth at f1 -885 kHz and f2 +885 kHz. Distortion

Products Measured over 1.2288 MHz Bandwidth at f1 -2.5 MHz and

f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.

Output Power — 24 Watts Avg.

1930-1990 MHz, 125 W, 26 V

LATERAL N-CHANNEL

RF POWER MOSFETs

Power Gain — 13.6 dB

Efficiency — 22%

ACPR — -51 dB

IM3 — -37.0 dBc

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 125 Watts CW

Output Power

Features

• Internally Matched for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

CASE 465B-03, STYLE 1

NI-880

MRF191225R3

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465C-02, STYLE 1

NI-880S

MRF19125SR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +65

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

330

1.89

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

0.53

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

Machine Model

2 (Minimum)

M3 (Minimum)

MRF19125R3 MRF19125SR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

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