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MRF19125

更新时间： 2024-11-14 22:45:59

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
12页	363K
描述
RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs

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MRF19125 数据手册

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SEMICONDUCTOR TECHNICAL DATA

Order this document

by MRF19125/D

The RF Sub–Micron MOSFET Line

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N–Channel Enhancement–Mode Lateral MOSFETs

Designed for PCN and PCS base station applications with frequencies from

1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier

applications.

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• Typical 2–Carrier N–CDMA Performance for V_DD= 26 Volts,

I_DQ= 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz

IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)

1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured

over a 30 kHz Bandwidth at f1 –885 kHz and f2 +885 kHz. Distortion

Products Measured over 1.2288 MHz Bandwidth at f1 –2.5 MHz and

f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.

Output Power — 24 Watts Avg.

1990 MHz, 125 W, 26 V

LATERAL N–CHANNEL

RF POWER MOSFETs

Power Gain — 13.6 dB

Efficiency — 22%

ACPR — –51 dB

IM3 — –37.0 dBc

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

CASE 465B–03, STYLE 1

(NI–880)

(MRF19125)

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 125 Watts (CW)

Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch

Reel.

CASE 465C–02, STYLE 1

(NI–880S)

(MRF19125S)

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain–Source Voltage

Gate–Source Voltage

DSS

+15, –0.5

Total Device Dissipation @ T = 25°C

Derate above 25°C

330

1.89

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

–65 to +200

200

°C

stg

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

Machine Model

2 (Minimum)

M3 (Minimum)

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

0.53

°C/W

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 2

MOTOROLA RF DEVICE DATA

MRF19125 MRF19125S MRF19125SR3

 Motorola, Inc. 2002

12 3 4 5 6 7...12

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与MRF19125相关器件

型号	品牌	获取价格	描述	数据表
MRF19125R3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF19125S	MOTOROLA	获取价格	RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs
MRF19125SR3	MOTOROLA	获取价格	RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs
MRF19125SR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF1946	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR
MRF1946	MOTOROLA	获取价格	RF POWER TRANSISTORS NPN SILICON
MRF1946A	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR
MRF1946A	MOTOROLA	获取价格	RF POWER TRANSISTORS NPN SILICON
MRF1980	MOTOROLA	获取价格	RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel
MRF1980S	MOTOROLA	获取价格	2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 375E-01, 5 PIN

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