Datasheet > MRF19090

MRF19090

更新时间： 2024-11-15 04:39:07

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描述
RF Power Field Effect Transistors

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MRF19090 数据手册

Document Number: MRF19090

Rev. 6, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for Class AB PCN and PCS base station applications with

frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and

multicarrier amplifier applications.

MRF19090R3

MRF19090SR3

• Typical CDMA Performance: 1990 MHz, 26 Volts

IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13

Output Power — 9 Watts Avg.

Power Gain — 10 dB

1930-1990 MHz, 90 W, 26 V

LATERAL N-CHANNEL

RF POWER MOSFETs

Adjacent Channel Power —

885 kHz: -47 dBc @ 30 kHz BW

1.25 MHz: -55 dBc @ 12.5 kHz BW

2.25 MHz: -55 dBc @ 1 MHz BW

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 90 Watts CW

Output Power

Features

• Internally Matched for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• RoHS Compliant

CASE 465B-03, STYLE 1

NI-880

MRF19090R3

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465C-02, STYLE 1

NI-880S

MRF19090SR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +65

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

270

1.54

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

0.65

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

Machine Model

1 (Minimum)

M3 (Minimum)

MRF19090R3 MRF19090SR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7 8

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