5秒后页面跳转
MRF19090SR3 PDF预览

MRF19090SR3

更新时间: 2024-10-01 04:39:07
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管功率场效应晶体管射频放大器
页数 文件大小 规格书
8页 351K
描述
RF Power Field Effect Transistors

MRF19090SR3 数据手册

 浏览型号MRF19090SR3的Datasheet PDF文件第2页浏览型号MRF19090SR3的Datasheet PDF文件第3页浏览型号MRF19090SR3的Datasheet PDF文件第4页浏览型号MRF19090SR3的Datasheet PDF文件第5页浏览型号MRF19090SR3的Datasheet PDF文件第6页浏览型号MRF19090SR3的Datasheet PDF文件第7页 
Document Number: MRF19090  
Rev. 6, 5/2006  
Freescale Semiconductor  
Technical Data  
RF Power Field Effect Transistors  
N-Channel Enhancement-Mode Lateral MOSFETs  
Designed for Class AB PCN and PCS base station applications with  
frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and  
multicarrier amplifier applications.  
MRF19090R3  
MRF19090SR3  
Typical CDMA Performance: 1990 MHz, 26 Volts  
IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13  
Output Power — 9 Watts Avg.  
Power Gain — 10 dB  
1930-1990 MHz, 90 W, 26 V  
LATERAL N-CHANNEL  
RF POWER MOSFETs  
Adjacent Channel Power —  
885 kHz: -47 dBc @ 30 kHz BW  
1.25 MHz: -55 dBc @ 12.5 kHz BW  
2.25 MHz: -55 dBc @ 1 MHz BW  
Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 90 Watts CW  
Output Power  
Features  
Internally Matched for Ease of Use  
High Gain, High Efficiency and High Linearity  
Integrated ESD Protection  
Designed for Maximum Gain and Insertion Phase Flatness  
Excellent Thermal Stability  
Characterized with Series Equivalent Large-Signal Impedance Parameters  
RoHS Compliant  
CASE 465B-03, STYLE 1  
NI-880  
MRF19090R3  
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.  
CASE 465C-02, STYLE 1  
NI-880S  
MRF19090SR3  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
Unit  
Vdc  
Vdc  
Drain-Source Voltage  
Gate-Source Voltage  
V
DSS  
-0.5, +65  
-0.5, +15  
V
GS  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
270  
1.54  
W
W/°C  
C
Storage Temperature Range  
Case Operating Temperature  
Operating Junction Temperature  
T
- 65 to +150  
150  
°C  
°C  
°C  
stg  
T
C
T
200  
J
Table 2. Thermal Characteristics  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
R
0.65  
°C/W  
θ
JC  
Table 3. ESD Protection Characteristics  
Test Conditions  
Class  
Human Body Model  
Machine Model  
1 (Minimum)  
M3 (Minimum)  
© Freescale Semiconductor, Inc., 2006. All rights reserved.  
 

与MRF19090SR3相关器件

型号 品牌 获取价格 描述 数据表
MRF19120 MOTOROLA

获取价格

RF POWER FIELD EFFECT TRANSISTORS
MRF19120S MOTOROLA

获取价格

RF POWER FIELD EFFECT TRANSISTORS
MRF19125 FREESCALE

获取价格

RF Power Field Effect Transistors
MRF19125 MOTOROLA

获取价格

RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs
MRF19125R3 FREESCALE

获取价格

RF Power Field Effect Transistors
MRF19125S MOTOROLA

获取价格

RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs
MRF19125SR3 MOTOROLA

获取价格

RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs
MRF19125SR3 FREESCALE

获取价格

RF Power Field Effect Transistors
MRF1946 ASI

获取价格

NPN SILICON RF POWER TRANSISTOR
MRF1946 MOTOROLA

获取价格

RF POWER TRANSISTORS NPN SILICON