Datasheet > MRF19085LS

MRF19085LS

更新时间： 2024-02-12 19:28:53

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		放大器晶体管
页数	文件大小	规格书
8页	156K
描述
L BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 465A-06, 3 PIN

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技术参数
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MRF19085LS 技术参数

生命周期：	Obsolete	包装说明：	FLATPACK, R-CDFP-F2
针数：	3	Reach Compliance Code：	unknown
风险等级：	5.06	外壳连接：	SOURCE
配置：	SINGLE	最小漏源击穿电压：	65 V
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最高频带：	L BAND
JESD-30 代码：	R-CDFP-F2	元件数量：	1
端子数量：	2	工作模式：	ENHANCEMENT MODE
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	RECTANGULAR
封装形式：	FLATPACK	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
Base Number Matches：	1

MRF19085LS 数据手册

M OT O RO LA

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

MR F 190 85

Tr a ns is to r s

MR F 1908 5R 3

MR F 19085 S

N–Channel Enhancement–Mode Lateral MOSFETs

Designed for PCN and PCS base station applications with frequencies from

1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier

applications.

MR F 1908 5S R 3

MR F 1908 5L S

•

Typical 2–Carrier N–CDMA Performance for V_DD= 26 Volts,

I_DQ= 850 mA, P_out= 18 Watts Avg., f1 = 1960 MHz, f2 = 1962.5 MHz

IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)

1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured

over a 30 kHz Bandwidth at f1 –885 Khz and f2 +885 kHz. Distortion

Products Measured over 1.2288 MHz Bandwidth at f1 –2.5 MHz and

f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.

Output Power — 18 Watts Avg.

1990 MHz, 90 W, 26 V

LATERAL N–CHANNEL

RF POWER MOSFETs

Power Gain — 13.0 dB

Efficiency — 23%

ACPR — –51 dB

IM3 — –36.5 dBc

•

Internally Matched, Controlled Q, for Ease of Use

High Gain, High Efficiency and High Linearity

Integrated ESD Protection

Designed for Maximum Gain and Insertion Phase Flatness

Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 90 Watts (CW)

Output Power

CASE 465–06, STYLE 1

(NI–780)

•

Excellent Thermal Stability

Characterized with Series Equivalent Large–Signal Impedance Parameters

(MRF19085)

Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch

Reel.

•

Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

40µ″ Nominal.

CASE 465A–06, STYLE 1

(NI–780S)

(MRF19085S, MRF19085LS)

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain–Source Voltage

Gate–Source Voltage

DSS

+15, –0.5

Total Device Dissipation @ T = 25°C

273

Watts

Derate above 25°C

1.56

W/°C

Storage Temperature Range

Operating Junction Temperature

–65 to +200

200

°C

stg

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

Machine Model

1 (Minimum)

M3 (Minimum)

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

0.64

°C/W

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 3

MOTOROLA WIRELESS

RF PRODUCT DEVICE DATA

MRF19085 MRF19085R3 MRF19085S MRF19085SR3 MRF19085LS MRF19085LSR3

5.2–255

12 3 4 5 6 7 8

中文翻译

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与MRF19085LS相关器件

型号	品牌	获取价格	描述	数据表
MRF19085LSR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF19085LSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF19085R3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF19085S	MOTOROLA	获取价格	L BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 465A-06, 3 PIN
MRF19085SR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF19090	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF19090	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF19090R3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF19090S	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF19090SR3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS

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