Datasheet > MRF18060ALR3

MRF18060ALR3

更新时间： 2024-11-18 04:39:07

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描述
RF Power Field Effect Transistors

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数据手册

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MRF18060ALR3 数据手册

Document Number: MRF18060A

Rev. 9, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF18060ALR3

MRF18060ALSR3

Designed for PCN and PCS base station applications with frequencies from

1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

applications. To be used in Class AB for PCN-PCS/cellular radio and WLL

applications. Specified for GSM 1805 - 1880 MHz.

• Typical GSM Performance, Full Frequency Band (1805 - 1880 MHz)

Power Gain — 13 dB @ 60 Watts

Efficiency — 45% @ 60 Watts

1805-1880 MHz, 60 W, 26 V

LATERAL N-CHANNEL

RF POWER MOSFETs

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1840 MHz, 60 Watts CW

Output Power

Features

• Internally Matched for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

40μ″ Nominal.

• RoHS Compliant

CASE 465-06, STYLE 1

NI-780

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.

MRF18060ALR3

CASE 465A-06, STYLE 1

NI-780S

MRF18060ALSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +65

-0.5, +15

Total Device Dissipation @ T ≥ 25°C

Derate above 25°C

180

1.03

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

0.97

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

Machine Model

2 (Minimum)

M3 (Minimum)

MRF18060ALR3 MRF18060ALSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

中文翻译

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