Datasheet > MRF18060B

MRF18060B

更新时间： 2024-01-06 21:56:37

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
8页	490K
描述
RF Power Field Effect Transistors

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技术参数
数据手册

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MRF18060B 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.75	Base Number Matches：	1

MRF18060B 数据手册

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Freescale Semiconductor, Inc.

Order this document

by MRF18060B/D

The RF MOSFET Line

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for PCN and PCS base station applications with frequencies from

1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

applications. To be used in Class AB for PCN-PCS/cellular radio and WLL

applications. Specified for GSM1930 - 1990 MHz.

MRF18060BR3

MRF18060BSR3

MRF18060BLSR3

• GSM Performance, Full Frequency Band (1930 - 1990 MHz)

Power Gain — 13 dB (Typ) @ 60 Watts CW

1.90 - 1.99 GHz, 60 W, 26 V

LATERAL N-CHANNEL

RF POWER MOSFETs

Efficiency — 45% (Typ) @ 60 Watts CW

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts CW Output Power

• Excellent Thermal Stability

• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

40µ″ Nominal.

CASE 465-06, STYLE 1

NI-780

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.

MRF18060BR3

CASE 465A-06, STYLE 1

NI-780S

MRF18060BSR3, MRF18060BLSR3

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

180

1.03

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +150

200

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Value

Unit

0.97

°C/W

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

Machine Model

2 (Minimum)

M3 (Minimum)

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 5

MOTOROLA RF DEVICE DATA

MRF18060BR3 MRF18060BSR3 MRF18060BLSR3

 Motorola, Inc. 2004

For More Information On This Product,

Go to: www.freescale.com

12 3 4 5 6 7 8

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