5秒后页面跳转
MRF18060ALSR3 PDF预览

MRF18060ALSR3

更新时间: 2024-01-16 08:25:17
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体射频场效应晶体管功率场效应晶体管功效放大器
页数 文件大小 规格书
8页 404K
描述
RF POWER FIELD EFFECT TRANSISTORS

MRF18060ALSR3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:FLATPACK, R-CDFP-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.31.00.01
风险等级:5.06其他特性:HIGH EFFICIENCY
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:65 VFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:L BANDJESD-30 代码:R-CDFP-F2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLATPACK峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):180 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MRF18060ALSR3 数据手册

 浏览型号MRF18060ALSR3的Datasheet PDF文件第2页浏览型号MRF18060ALSR3的Datasheet PDF文件第3页浏览型号MRF18060ALSR3的Datasheet PDF文件第4页浏览型号MRF18060ALSR3的Datasheet PDF文件第5页浏览型号MRF18060ALSR3的Datasheet PDF文件第6页浏览型号MRF18060ALSR3的Datasheet PDF文件第7页 
ꢒ ꢓꢎ ꢓ ꢀꢓ ꢔꢕ  
SEMICONDUCTOR TECHNICAL DATA  
Order this document  
by MRF18060A/D  
The RF MOSFET Line  
ꢀ ꢁ ꢂ ꢃꢄꢅ ꢆ ꢁꢇꢅ ꢈꢉ ꢊ ꢋꢋ ꢅ ꢌꢍ ꢎꢆ ꢏꢐ ꢑ ꢇꢑ ꢍꢃ ꢆ ꢑ  
ꢒꢀ ꢁ ꢖꢗꢘ ꢙꢘ ꢕ  
N–Channel Enhancement–Mode Lateral MOSFETs  
Designed for PCN and PCS base station applications with frequencies from  
1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier  
applications. To be used in Class AB for PCN–PCS/cellular radio and WLL  
applications. Specified for GSM1805 – 1880 MHz.  
1.80 – 1.88 GHz, 60 W, 26 V  
LATERAL N–CHANNEL  
RF POWER MOSFETs  
Typical GSM Performance, Full Frequency Band (1805 – 1880 MHz)  
Power Gain — 13 dB (Typ) @ 60 Watts  
Efficiency — 45% (Typ) @ 60 Watts  
Internally Matched, Controlled Q, for Ease of Use  
High Gain, High Efficiency and High Linearity  
Integrated ESD Protection  
Designed for Maximum Gain and Insertion Phase Flatness  
Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts CW Output Power  
Excellent Thermal Stability  
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm,  
CASE 465–06, STYLE 1  
NI–780  
13 Inch Reel.  
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates  
40µ″ Nominal.  
MRF18060A  
CASE 465A–06, STYLE 1  
NI–780S  
MRF18060ALSR3, MRF18060ASR3  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
65  
Unit  
Vdc  
Vdc  
Drain–Source Voltage  
Gate–Source Voltage  
V
DSS  
V
GS  
–0.5, +15  
Total Device Dissipation @ T 25°C  
Derate above 25°C  
P
D
180  
1.03  
Watts  
W/°C  
C
Storage Temperature Range  
Operating Junction Temperature  
T
–65 to +150  
200  
°C  
°C  
stg  
T
J
ESD PROTECTION CHARACTERISTICS  
Test Conditions  
Class  
Human Body Model  
Machine Model  
2 (Minimum)  
M3 (Minimum)  
THERMAL CHARACTERISTICS  
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Max  
Unit  
R
0.97  
°C/W  
θ
JC  
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
REV 5  
Motorola, Inc. 2002  

与MRF18060ALSR3相关器件

型号 品牌 获取价格 描述 数据表
MRF18060AR3 MOTOROLA

获取价格

RF POWER FIELD EFFECT TRANSISTORS
MRF18060AS MOTOROLA

获取价格

L BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 465A-06, 3 PIN
MRF18060AS NXP

获取价格

TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391BVAR
MRF18060ASR3 MOTOROLA

获取价格

RF POWER FIELD EFFECT TRANSISTORS
MRF18060B MOTOROLA

获取价格

RF Power Field Effect Transistors
MRF18060B FREESCALE

获取价格

RF Power Field Effect Transistor
MRF18060BLR3 FREESCALE

获取价格

RF Power Field Effect Transistor
MRF18060BLSR3 MOTOROLA

获取价格

RF Power Field Effect Transistors
MRF18060BLSR3 FREESCALE

获取价格

RF Power Field Effect Transistor
MRF18060BR3 MOTOROLA

获取价格

RF Power Field Effect Transistors