MRF18085ALSR3

更新时间： 2024-09-26 22:37:27

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
8页	379K
描述
RF Power Field Effect Transistors

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MRF18085ALSR3 数据手册

MRF18085A

Rev. 4, 12/2004

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF18085AR3

Designed for GSM and GSM EDGE base station applications with

frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and

multicarrier amplifier applications. To be used in Class AB for PCN-PCS/

cellular radio and WLL applications. Specified for GSM - GSM EDGE

1805-1880 MHz.

MRF18085ALSR3

1800-1880 MHz, 85 W, 26 V

GSM/GSM EDGE

LATERAL N-CHANNEL

RF POWER MOSFETs

• GSM and GSM EDGE Performance, Full Frequency Band

(1805-1880 MHz)

Power Gain - 15 dB (Typ) @ 85 Watts CW

Efficiency - 52% (Typ) @ 85 Watts CW

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power,

@ f = 1805 MHz

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

CASE 465-06, STYLE 1

NI-780

MRF18085AR3

• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

40µ″ Nominal.

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465A-06, STYLE 1

NI-780S

MRF18085ALSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

-0.5, +65

-0.5, +15

Vdc

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

273

1.56

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +150

200

°C

stg

Table 2. Thermal Characteristics

Characteristic

(1)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

0.79

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

1 (Minimum)

M3 (Minimum)

Machine Model

1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF18085AR3 MRF18085ALSR3

RF Device Data

Freescale Semiconductor

5-1

12 3 4 5 6 7 8

中文翻译

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与MRF18085ALSR3相关器件

型号	品牌	获取价格	描述	数据表
MRF18085AR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF18085B	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF18085B	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF18085BLR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF18085BLSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF18085BLSR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF18085BR3	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF18090A	MOTOROLA	获取价格	1.80 - 1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETS
MRF18090A	FREESCALE	获取价格	RF Power Field Effect Transistor
MRF18090AR3	FREESCALE	获取价格	RF Power Field Effect Transistor

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