Datasheet > MRF18060ALR3_08

MRF18060ALR3_08

更新时间： 2024-01-01 10:07:00

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
10页	368K
描述
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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MRF18060ALR3_08 数据手册

Document Number: MRF18060A

Rev. 11, 10/2008

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for PCN and PCS base station applications with frequencies from

1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

applications. To be used in Class AB for PCN-PCS/cellular radio and WLL

applications.

MRF18060ALR3

• Typical GSM Performance @ 1805 MHz

Power Gain — 13 dB @ 60 Watts

Efficiency — 45% @ 60 Watts

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1840 MHz, 60 Watts CW

Output Power

Features

1805-1880 MHz, 60 W, 26 V

LATERAL N-CHANNEL

RF POWER MOSFET

• Internally Matched for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465-06, STYLE 1

NI-780

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

-0.5, +65

-0.5, +15

DSS

Total Device Dissipation @ T ≥ 25°C

Derate above 25°C

180

1.03

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

0.97

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

Machine Model

2 (Minimum)

M3 (Minimum)

MRF18060ALR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...10

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