5秒后页面跳转
MRF18060ALR3_08 PDF预览

MRF18060ALR3_08

更新时间: 2024-11-09 10:47:31
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管功率场效应晶体管射频
页数 文件大小 规格书
10页 368K
描述
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

MRF18060ALR3_08 数据手册

 浏览型号MRF18060ALR3_08的Datasheet PDF文件第2页浏览型号MRF18060ALR3_08的Datasheet PDF文件第3页浏览型号MRF18060ALR3_08的Datasheet PDF文件第4页浏览型号MRF18060ALR3_08的Datasheet PDF文件第5页浏览型号MRF18060ALR3_08的Datasheet PDF文件第6页浏览型号MRF18060ALR3_08的Datasheet PDF文件第7页 
Document Number: MRF18060A  
Rev. 11, 10/2008  
Freescale Semiconductor  
Technical Data  
RF Power Field Effect Transistor  
N-Channel Enhancement-Mode Lateral MOSFET  
Designed for PCN and PCS base station applications with frequencies from  
1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier  
applications. To be used in Class AB for PCN-PCS/cellular radio and WLL  
applications.  
MRF18060ALR3  
Typical GSM Performance @ 1805 MHz  
Power Gain — 13 dB @ 60 Watts  
Efficiency — 45% @ 60 Watts  
Capable of Handling 10:1 VSWR, @ 26 Vdc, 1840 MHz, 60 Watts CW  
Output Power  
Features  
1805-1880 MHz, 60 W, 26 V  
LATERAL N-CHANNEL  
RF POWER MOSFET  
Internally Matched for Ease of Use  
High Gain, High Efficiency and High Linearity  
Integrated ESD Protection  
Designed for Maximum Gain and Insertion Phase Flatness  
Excellent Thermal Stability  
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates  
40μ″ Nominal.  
RoHS Compliant  
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.  
CASE 465-06, STYLE 1  
NI-780  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
Unit  
Vdc  
Vdc  
Drain-Source Voltage  
Gate-Source Voltage  
V
-0.5, +65  
-0.5, +15  
DSS  
V
GS  
Total Device Dissipation @ T 25°C  
Derate above 25°C  
P
180  
1.03  
W
W/°C  
C
D
Storage Temperature Range  
Case Operating Temperature  
Operating Junction Temperature  
T
- 65 to +150  
150  
°C  
°C  
°C  
stg  
T
C
T
200  
J
Table 2. Thermal Characteristics  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
R
θ
JC  
0.97  
°C/W  
Table 3. ESD Protection Characteristics  
Test Conditions  
Class  
Human Body Model  
Machine Model  
2 (Minimum)  
M3 (Minimum)  
© Freescale Semiconductor, Inc., 2008. All rights reserved.  

与MRF18060ALR3_08相关器件

型号 品牌 获取价格 描述 数据表
MRF18060ALSR3 FREESCALE

获取价格

RF Power Field Effect Transistors
MRF18060ALSR3 MOTOROLA

获取价格

RF POWER FIELD EFFECT TRANSISTORS
MRF18060AR3 MOTOROLA

获取价格

RF POWER FIELD EFFECT TRANSISTORS
MRF18060AS MOTOROLA

获取价格

L BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 465A-06, 3 PIN
MRF18060AS NXP

获取价格

TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391BVAR
MRF18060ASR3 MOTOROLA

获取价格

RF POWER FIELD EFFECT TRANSISTORS
MRF18060B MOTOROLA

获取价格

RF Power Field Effect Transistors
MRF18060B FREESCALE

获取价格

RF Power Field Effect Transistor
MRF18060BLR3 FREESCALE

获取价格

RF Power Field Effect Transistor
MRF18060BLSR3 MOTOROLA

获取价格

RF Power Field Effect Transistors