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MRF18085A PDF预览

MRF18085A

更新时间: 2024-02-11 15:58:31
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率场效应晶体管射频
页数 文件大小 规格书
8页 406K
描述
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

MRF18085A 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-CDFM-F2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.91
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:65 VFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:L BANDJESD-30 代码:R-CDFM-F2
JESD-609代码:e0元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):273 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON

MRF18085A 数据手册

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ꢒ ꢓꢎ ꢓ ꢀꢓ ꢔꢕ  
SEMICONDUCTOR TECHNICAL DATA  
Order this document  
by MRF18085A/D  
The RF MOSFET Line  
ꢀ ꢁ ꢂ ꢃꢄꢅ ꢆ ꢁꢇꢅ ꢈꢉ ꢊ ꢋꢋ ꢅ ꢌꢍ ꢎꢆ ꢏꢐ ꢑ ꢇꢑ ꢍꢃ ꢆ ꢑ  
N–Channel Enhancement–Mode Lateral MOSFETs  
Designed for GSM and GSM EDGE base station applications with  
frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier  
amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and  
WLL applications. Specified for GSM–GSM EDGE 1805 – 1880 MHz.  
GSM/GSM EDGE  
1.8 – 1.88 GHz, 85 W, 26 V  
LATERAL N–CHANNEL  
RF POWER MOSFETs  
GSM and GSM EDGE Performance, Full Frequency Band  
(1805–1880 MHz)  
Power Gain – 15 dB (Typ) @ 85 Watts CW  
Efficiency – 52% (Typ) @ 85 Watts CW  
Internally Matched, Controlled Q, for Ease of Use  
High Gain, High Efficiency and High Linearity  
Integrated ESD Protection  
Designed for Maximum Gain and Insertion Phase Flatness  
Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power,  
@ f = 1805 MHz  
Excellent Thermal Stability  
Characterized with Series Equivalent Large–Signal Impedance Parameters  
CASE 465–06, STYLE 1  
NI–780  
MRF18085A, MRF18085AR3  
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.  
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates  
40µ″ Nominal.  
CASE 465A–06, STYLE 1  
NI–780S  
MRF18085ALSR3  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
65  
Unit  
Drain–Source Voltage  
Gate–Source Voltage  
V
DSS  
Vdc  
Vdc  
V
GS  
–0.5, +15  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
273  
1.56  
Watts  
W/°C  
C
Storage Temperature Range  
Operating Junction Temperature  
T
–65 to +200  
200  
°C  
°C  
stg  
T
J
THERMAL CHARACTERISTICS  
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Max  
Unit  
R
0.64  
°C/W  
θ
JC  
ESD PROTECTION CHARACTERISTICS  
Test Conditions  
Class  
Human Body Model  
Machine Model  
1 (Typical)  
M3 (Typical)  
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
REV 0  
Motorola, Inc. 2002  

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