5秒后页面跳转
MRF18060A PDF预览

MRF18060A

更新时间: 2024-11-20 22:34:51
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率场效应晶体管射频
页数 文件大小 规格书
8页 404K
描述
RF POWER FIELD EFFECT TRANSISTORS

MRF18060A 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:NI-780, CASE 465-06, 2 PINReach Compliance Code:unknown
风险等级:5.26其他特性:HIGH EFFICIENCY
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:65 VFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:L BANDJESD-30 代码:R-CDFM-F2
JESD-609代码:e0元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON

MRF18060A 数据手册

 浏览型号MRF18060A的Datasheet PDF文件第2页浏览型号MRF18060A的Datasheet PDF文件第3页浏览型号MRF18060A的Datasheet PDF文件第4页浏览型号MRF18060A的Datasheet PDF文件第5页浏览型号MRF18060A的Datasheet PDF文件第6页浏览型号MRF18060A的Datasheet PDF文件第7页 
ꢒ ꢓꢎ ꢓ ꢀꢓ ꢔꢕ  
SEMICONDUCTOR TECHNICAL DATA  
Order this document  
by MRF18060A/D  
The RF MOSFET Line  
ꢀ ꢁ ꢂ ꢃꢄꢅ ꢆ ꢁꢇꢅ ꢈꢉ ꢊ ꢋꢋ ꢅ ꢌꢍ ꢎꢆ ꢏꢐ ꢑ ꢇꢑ ꢍꢃ ꢆ ꢑ  
ꢒꢀ ꢁ ꢖꢗꢘ ꢙꢘ ꢕ  
N–Channel Enhancement–Mode Lateral MOSFETs  
Designed for PCN and PCS base station applications with frequencies from  
1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier  
applications. To be used in Class AB for PCN–PCS/cellular radio and WLL  
applications. Specified for GSM1805 – 1880 MHz.  
1.80 – 1.88 GHz, 60 W, 26 V  
LATERAL N–CHANNEL  
RF POWER MOSFETs  
Typical GSM Performance, Full Frequency Band (1805 – 1880 MHz)  
Power Gain — 13 dB (Typ) @ 60 Watts  
Efficiency — 45% (Typ) @ 60 Watts  
Internally Matched, Controlled Q, for Ease of Use  
High Gain, High Efficiency and High Linearity  
Integrated ESD Protection  
Designed for Maximum Gain and Insertion Phase Flatness  
Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts CW Output Power  
Excellent Thermal Stability  
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm,  
CASE 465–06, STYLE 1  
NI–780  
13 Inch Reel.  
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates  
40µ″ Nominal.  
MRF18060A  
CASE 465A–06, STYLE 1  
NI–780S  
MRF18060ALSR3, MRF18060ASR3  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
65  
Unit  
Vdc  
Vdc  
Drain–Source Voltage  
Gate–Source Voltage  
V
DSS  
V
GS  
–0.5, +15  
Total Device Dissipation @ T 25°C  
Derate above 25°C  
P
D
180  
1.03  
Watts  
W/°C  
C
Storage Temperature Range  
Operating Junction Temperature  
T
–65 to +150  
200  
°C  
°C  
stg  
T
J
ESD PROTECTION CHARACTERISTICS  
Test Conditions  
Class  
Human Body Model  
Machine Model  
2 (Minimum)  
M3 (Minimum)  
THERMAL CHARACTERISTICS  
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Max  
Unit  
R
0.97  
°C/W  
θ
JC  
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
REV 5  
Motorola, Inc. 2002  

与MRF18060A相关器件

型号 品牌 获取价格 描述 数据表
MRF18060ALR3 FREESCALE

获取价格

RF Power Field Effect Transistors
MRF18060ALR3_08 FREESCALE

获取价格

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF18060ALSR3 FREESCALE

获取价格

RF Power Field Effect Transistors
MRF18060ALSR3 MOTOROLA

获取价格

RF POWER FIELD EFFECT TRANSISTORS
MRF18060AR3 MOTOROLA

获取价格

RF POWER FIELD EFFECT TRANSISTORS
MRF18060AS MOTOROLA

获取价格

L BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 465A-06, 3 PIN
MRF18060AS NXP

获取价格

TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391BVAR
MRF18060ASR3 MOTOROLA

获取价格

RF POWER FIELD EFFECT TRANSISTORS
MRF18060B MOTOROLA

获取价格

RF Power Field Effect Transistors
MRF18060B FREESCALE

获取价格

RF Power Field Effect Transistor