Datasheet > MRF18060A

MRF18060A

更新时间： 2024-02-01 04:02:33

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
8页	404K
描述
RF POWER FIELD EFFECT TRANSISTORS

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技术参数
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MRF18060A 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.75	Base Number Matches：	1

MRF18060A 数据手册

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SEMICONDUCTOR TECHNICAL DATA

Order this document

by MRF18060A/D

The RF MOSFET Line

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ꢒꢀ ꢁ ꢖꢗꢘ ꢙꢘ ꢕ

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N–Channel Enhancement–Mode Lateral MOSFETs

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Designed for PCN and PCS base station applications with frequencies from

1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

applications. To be used in Class AB for PCN–PCS/cellular radio and WLL

applications. Specified for GSM1805 – 1880 MHz.

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1.80 – 1.88 GHz, 60 W, 26 V

LATERAL N–CHANNEL

RF POWER MOSFETs

• Typical GSM Performance, Full Frequency Band (1805 – 1880 MHz)

Power Gain — 13 dB (Typ) @ 60 Watts

Efficiency — 45% (Typ) @ 60 Watts

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts CW Output Power

• Excellent Thermal Stability

• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm,

CASE 465–06, STYLE 1

NI–780

13 Inch Reel.

• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

40µ″ Nominal.

MRF18060A

CASE 465A–06, STYLE 1

NI–780S

MRF18060ALSR3, MRF18060ASR3

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain–Source Voltage

Gate–Source Voltage

DSS

–0.5, +15

Total Device Dissipation @ T ≥ 25°C

Derate above 25°C

180

1.03

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

–65 to +150

200

°C

stg

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

Machine Model

2 (Minimum)

M3 (Minimum)

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

0.97

°C/W

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 5

MOTOROLA RF DEVICE DATA

MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3

 Motorola, Inc. 2002

12 3 4 5 6 7 8

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与MRF18060A相关器件

型号	品牌	获取价格	描述	数据表
MRF18060ALR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF18060ALR3_08	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF18060ALSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF18060ALSR3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF18060AR3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF18060AS	MOTOROLA	获取价格	L BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 465A-06, 3 PIN
MRF18060AS	NXP	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391BVAR
MRF18060ASR3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF18060B	MOTOROLA	获取价格	RF Power Field Effect Transistors
MRF18060B	FREESCALE	获取价格	RF Power Field Effect Transistor

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