是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | NI-780, CASE 465-06, 2 PIN | Reach Compliance Code: | unknown |
风险等级: | 5.26 | 其他特性: | HIGH EFFICIENCY |
外壳连接: | SOURCE | 配置: | SINGLE |
最小漏源击穿电压: | 65 V | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最高频带: | L BAND | JESD-30 代码: | R-CDFM-F2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 200 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MRF18060ALR3 | FREESCALE |
获取价格 |
RF Power Field Effect Transistors | |
MRF18060ALR3_08 | FREESCALE |
获取价格 |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET | |
MRF18060ALSR3 | FREESCALE |
获取价格 |
RF Power Field Effect Transistors | |
MRF18060ALSR3 | MOTOROLA |
获取价格 |
RF POWER FIELD EFFECT TRANSISTORS | |
MRF18060AR3 | MOTOROLA |
获取价格 |
RF POWER FIELD EFFECT TRANSISTORS | |
MRF18060AS | MOTOROLA |
获取价格 |
L BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 465A-06, 3 PIN | |
MRF18060AS | NXP |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391BVAR | |
MRF18060ASR3 | MOTOROLA |
获取价格 |
RF POWER FIELD EFFECT TRANSISTORS | |
MRF18060B | MOTOROLA |
获取价格 |
RF Power Field Effect Transistors | |
MRF18060B | FREESCALE |
获取价格 |
RF Power Field Effect Transistor |