Datasheet > MMRF1004GNR1

MMRF1004GNR1

更新时间： 2024-09-16 02:52:35

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
27页	965K
描述
RF Power Field Effect Transistors

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MMRF1004GNR1 数据手册

Document Number: MMRF1004N

Rev. 1, 1/2014

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

MMRF1004NR1

MMRF1004GNR1

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for Class A or Class AB general purpose applications with

frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation

and multipurpose amplifier applications.



Typical Two--Tone Performance @ 2170 MHz: V_DD= 28 Vdc, I_DQ

130 mA, P_out= 10 W PEP

1600--2200 MHz, 10 W, 28 V

GSM, GSM EDGE

SINGLE N--CDMA

2 x W--CDMA

LATERAL N--CHANNEL

RF POWER MOSFETs

Power Gain — 15.5 dB

Drain Efficiency — 36%

IMD — --34 dBc

Typical 2--Carrier W--CDMA Performance: V_DD= 28 Vdc, I_DQ= 130 mA,

P_out= 1 W Avg., Full Frequency Band (2130--2170 MHz), Channel

Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability

Power Gain — 15.5 dB

Drain Efficiency — 15%

IM3 @ 10 MHz Offset — --47 dBc in 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — --49 dBc in 3.84 MHz Channel Bandwidth



Typical Single--Carrier N--CDMA Performance: V_DD= 28 Vdc, I_DQ=

T O -- 2 7 0 -- 2

PLASTIC

MMRF1004NR1

130 mA, P_out= 1 W Avg., Full Frequency Band (1930--1990 MHz), IS--95

(Pilot, Sync, Paging, Traffic Codes 8 through 13), Channel Bandwidth =

1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 15.5 dB

Drain Efficiency — 16%

ACPR @ 885 kHz Offset = --60 dBc in 30 kHz Bandwidth



Typical GSM EDGE Performance: V_DD= 28 Vdc, I_DQ= 130 mA, P_out

4 W Avg., Full Frequency Band (1805--1880 MHz)

Power Gain — 16 dB

Drain Efficiency — 33%

TO--270G--2

PLASTIC

MMRF1004GNR1

EVM — 1.3% rms

Capable of Handling 5:1 VSWR, @ 28 Vdc, 2000 MHz, 10 W CW

Output Power

Features



Characterized with Series Equivalent Large--Signal Impedance Parameters

Internally Matched for Ease of Use

Qualified Up to a Maximum of 32 V_DDOperation

Integrated ESD Protection

225C Capable Plastic Package

In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel.

Gate

Drain

(Top View)

Note: The backside of the package is the

source terminal for the transistor.

Figure 1. Pin Connections

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...27

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