Datasheet > MMRF1005HSR5

MMRF1005HSR5

更新时间： 2024-11-02 02:52:31

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恩智浦 - NXP		/
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RF Power Field Effect Transistors

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MMRF1005HSR5 数据手册

Document Number: MMRF1005H

Rev. 1, 4/2015

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

MMRF1005HR5

MMRF1005HSR5

RF power transistors designed for CW and pulse applications operating at

1300 MHz. These devices are suitable for use in defense and commercial CW

and pulse applications, such as DME/IFF systems.



Typical Pulse Performance: V_DD= 50 Vdc, I_DQ= 100 mA

(W)

(dB)



(%)

IRL

(dB)

out

1300 MHz, 250 W, 50 V

LATERAL N--CHANNEL

RF POWER MOSFETs

Signal Type

(MHz)

Pulse (200 sec,

10% Duty Cycle)

250 Peak

1300

22.7

57.0

-- 1 8



Typical CW Performance: V_DD= 50 Vdc, I_DQ= 10 mA, T_C= 61C

(W)

(dB)



(%)

IRL

(dB)

out

Signal Type

(MHz)

230 CW

1300

20.0

53.0

-- 2 5

NI--780H--2L

MMRF1005HR5

Capable of Handling a Load Mismatch of 10:1 VSWR, @ 50 Vdc, 1300 MHz

at all Phase Angles, 250 W Pulse Peak Power, 10% Duty Cycle, 200 sec

Features



Characterized with series equivalent large--signal impedance parameters

Internally matched for ease of use

Qualified up to a maximum of 50 V_DDoperation

Characterized from 20 to 50 V for extended power range

Integrated ESD protection

Greater negative gate--source voltage range for improved Class C

operation

NI--780S--2L

MMRF1005HSR5



In tape and reel. R5 suffix = 50 units, 56 mm tape width, 13--inch reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

--0.5, +120

--6.0, +10

-- 65 to +150

150

Unit

Vdc

C

Drain--Source Voltage

DSS

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

C

(1)

225

C

Total Device Dissipation @ T = 25C

476

Derate above 25C

2.38

W/C

Table 2. Thermal Characteristics

(2)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

C/W

Pulse: Case Temperature 65C, 250 W Peak, 200 sec Pulse Width, 10% Duty

Cycle, 50 Vdc, I = 100 mA, 1300 MHz

CW: Case Temperature 77C, 235 W CW, 50 Vdc, I



0.07

0.42



= 10 mA, 1300 MHz

1. Continuous use at maximum temperature will affect MTTF.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955.

MMRF1005HR5 MMRF1005HSR5

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...15

中文翻译

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