5秒后页面跳转
MMRF1004N PDF预览

MMRF1004N

更新时间: 2024-11-19 02:52:31
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
27页 965K
描述
RF Power Field Effect Transistors

MMRF1004N 数据手册

 浏览型号MMRF1004N的Datasheet PDF文件第2页浏览型号MMRF1004N的Datasheet PDF文件第3页浏览型号MMRF1004N的Datasheet PDF文件第4页浏览型号MMRF1004N的Datasheet PDF文件第5页浏览型号MMRF1004N的Datasheet PDF文件第6页浏览型号MMRF1004N的Datasheet PDF文件第7页 
Document Number: MMRF1004N  
Rev. 1, 1/2014  
Freescale Semiconductor  
Technical Data  
RF Power Field Effect Transistors  
MMRF1004NR1  
MMRF1004GNR1  
N--Channel Enhancement--Mode Lateral MOSFETs  
Designed for Class A or Class AB general purpose applications with  
frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation  
and multipurpose amplifier applications.  
Typical Two--Tone Performance @ 2170 MHz: VDD = 28 Vdc, IDQ  
130 mA, Pout = 10 W PEP  
=
1600--2200 MHz, 10 W, 28 V  
GSM, GSM EDGE  
SINGLE N--CDMA  
2 x W--CDMA  
LATERAL N--CHANNEL  
RF POWER MOSFETs  
Power Gain — 15.5 dB  
Drain Efficiency — 36%  
IMD — --34 dBc  
Typical 2--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 130 mA,  
Pout = 1 W Avg., Full Frequency Band (2130--2170 MHz), Channel  
Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability  
Power Gain — 15.5 dB  
Drain Efficiency — 15%  
IM3 @ 10 MHz Offset — --47 dBc in 3.84 MHz Channel Bandwidth  
ACPR @ 5 MHz Offset — --49 dBc in 3.84 MHz Channel Bandwidth  
Typical Single--Carrier N--CDMA Performance: VDD = 28 Vdc, IDQ =  
T O -- 2 7 0 -- 2  
PLASTIC  
MMRF1004NR1  
130 mA, Pout = 1 W Avg., Full Frequency Band (1930--1990 MHz), IS--95  
(Pilot, Sync, Paging, Traffic Codes 8 through 13), Channel Bandwidth =  
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.  
Power Gain — 15.5 dB  
Drain Efficiency — 16%  
ACPR @ 885 kHz Offset = --60 dBc in 30 kHz Bandwidth  
Typical GSM EDGE Performance: VDD = 28 Vdc, IDQ = 130 mA, Pout  
4 W Avg., Full Frequency Band (1805--1880 MHz)  
Power Gain — 16 dB  
=
Drain Efficiency — 33%  
TO--270G--2  
PLASTIC  
MMRF1004GNR1  
EVM — 1.3% rms  
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2000 MHz, 10 W CW  
Output Power  
Features  
Characterized with Series Equivalent Large--Signal Impedance Parameters  
Internally Matched for Ease of Use  
Qualified Up to a Maximum of 32 VDD Operation  
Integrated ESD Protection  
225C Capable Plastic Package  
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel.  
Gate  
Drain  
1
2
(Top View)  
Note: The backside of the package is the  
source terminal for the transistor.  
Figure 1. Pin Connections  
Freescale Semiconductor, Inc., 2013--2014. All rights reserved.  

与MMRF1004N相关器件

型号 品牌 获取价格 描述 数据表
MMRF1004NR1 NXP

获取价格

GSM/GSM EDGE, SINGLE N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz,
MMRF1005H NXP

获取价格

RF Power Field Effect Transistors
MMRF1005HR5 NXP

获取价格

RF Power Field Effect Transistors
MMRF1005HSR5 NXP

获取价格

RF Power Field Effect Transistors
MMRF1006H NXP

获取价格

RF Power Field Effect Transistors
MMRF1006HR5 NXP

获取价格

RF Power Field Effect Transistors
MMRF1006HSR5 NXP

获取价格

RF Power Field Effect Transistors
MMRF1007H NXP

获取价格

RF Power Field Effect Transistors
MMRF1007HR5 NXP

获取价格

RF Power Field Effect Transistors
MMRF1007HSR5 NXP

获取价格

RF Power Field Effect Transistors