MMBTA56WT1

更新时间： 2024-11-21 05:49:23

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管驱动
页数	文件大小	规格书
5页	68K
描述
Driver Transistor PNP Silicon

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中文翻译

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数据手册
替代型号

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MMBTA56WT1 数据手册

MMBTA56WT1

Driver Transistor

PNP Silicon

Features

• Moisture Sensitivity Level: 1

• ESD Rating: Human Body Model − 4 kV

Machine Model − 400 V

• Pb−Free Package is Available

http://onsemi.com

COLLECTOR

MAXIMUM RATINGS

BASE

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Value

−80

Unit

Vdc

CEO

CBO

EMITTER

−80

Vdc

EBO

−4.0

−500

Vdc

Collector Current − Continuous

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board

150

T = 25°C

SC−70 (SOT−323)

CASE 419

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

833

°C/W

°C

STYLE 3

T , T

−55 to +150

stg

Maximum ratings are those values beyond which device damage can occur.

Maximumratings applied to the device are individual stress limit values (not normal

operating conditions) and are not valid simultaneously. If these limits are exceeded,

device functional operation is not implied, damage may occur and reliability may

be affected.

MARKING DIAGRAM

FM M G

FM = Device Code

= Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

ORDERING INFORMATION

†

Device

Package

Shipping

MMBTA56WT1

MMBTA56WT1G

SC−70

3000/Tape & Reel

SC−70

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

January, 2006 − Rev. 1

MMBTA56WT1/D

12 3 4 5

中文翻译

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MMBTA56WT1 替代型号

型号	品牌	替代类型	描述	数据表
MMBTA56WT1G	ONSEMI	类似代替	Driver Transistor PNP Silicon

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