Datasheet > MMBTA63S62Z

MMBTA63S62Z

更新时间： 2024-11-05 07:41:51

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
3页	39K
描述
Small Signal Bipolar Transistor, 1.2A I(C), 1-Element, PNP, Silicon

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MMBTA63S62Z 数据手册

MPSA63

MMBTA63

PZTA63

TO-92

SOT-23

Mark: 2U

SOT-223

PNP Darlington Transistor

This device is designed for applications requiring extremely high

current gain at currents to 800 mA. Sourced from Process 61.

See MPSA64 for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CES

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

1.2

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

MPSA63

*MMBTA63

**PZTA63

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

625

5.0

83.3

350

2.8

1,000

8.0

mW/°C

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction to Ambient

200

357

125

°C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm².

A63, Rev A

1997 Fairchild Semiconductor Corporation

12 3

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