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MMBTA64 PDF预览

MMBTA64

更新时间： 2024-11-15 22:39:43
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管达林顿晶体管光电二极管PC
页数 文件大小 规格书
2页 48K
描述
PNP SURFACE MOUNT DARLINGTON TRANSISTOR

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中文翻译

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MMBTA64 数据手册

 浏览型号MMBTA64的Datasheet PDF文件第2页 
MMBTA63 / MMBTA64  
PNP SURFACE MOUNT DARLINGTON TRANSISTOR  
Features  
·
·
Epitaxial Planar Die Construction  
Complementary NPN Types Available  
(MMBTA13 / MMBTA14)  
Ideal for Medium Power Amplification and  
Switching  
High Current Gain  
SOT-23  
A
Dim  
A
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.085  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.180  
8°  
C
·
·
TOP VIEW  
B
B
C
C
B
E
D
G
D
E
Mechanical Data  
·
·
E
H
Case: SOT-23, Molded Plastic  
Case material - UL Flammability Rating  
Classification 94V-0  
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Terminal Connections: See Diagram  
MMBTA63 Marking (See Page 2): K2E, K3E  
MMBTA64 Marking (See Page 2): K3E  
Ordering & Date Code Information: See Page 2  
Weight: 0.008 grams (approx.)  
G
H
K
M
J
L
D
J
·
·
K
L
C
·
·
·
·
·
M
a
All Dimensions in mm  
B
E
@ TA = 25°C unless otherwise specified  
Symbol  
Maximum Ratings  
Characteristic  
MMBTA63  
MMBTA64  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage  
-30  
-30  
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
-10  
V
Collector Current - Continuous (Note 1)  
Power Dissipation (Note 1)  
-500  
300  
417  
mA  
mW  
°C/W  
°C  
Pd  
RqJA  
Tj, TSTG  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage and Temperature Range  
-55 to +150  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
OFF CHARACTERISTICS (Note 2)  
Collector-Emitter Breakdown Voltage  
Collector Cutoff Current  
Symbol  
Min  
Max  
Unit  
Test Condition  
V(BR)CEO  
ICBO  
IC = -100mA VBE = 0V  
-30  
¾
¾
V
V
CB = -30V, IE = 0  
-100  
-100  
nA  
nA  
VEB = -10V, IC = 0  
IEBO  
Emitter Cutoff Current  
¾
ON CHARACTERISTICS (Note 2)  
DC Current Gain  
IC  
IC  
=
=
-10mA, VCE = -5.0V  
-10mA, VCE = -5.0V  
5,000  
MMBTA63  
MMBTA64  
MMBTA63  
MMBTA64  
10,000  
10,000  
20,000  
hFE  
¾
¾
IC = -100mA, VCE = -5.0V  
IC = -100mA, VCE = -5.0V  
VCE(SAT)  
VBE(SAT)  
Collector-Emitter Saturation Voltage  
Base- Emitter Saturation Voltage  
SMALL SIGNAL CHARACTERISTICS  
IC = -100mA, IB = -100mA  
¾
¾
-1.5  
-2.0  
V
V
IC = -100mA, VCE = -5.0V  
VCE = -5.0V, IC = -10mA,  
f = 100MHz  
fT  
Current Gain-Bandwidth Product  
125  
¾
MHz  
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration test pulse used to minimize self-heating effect.  
DS30055 Rev. 3 - 2  
1 of 2  
MMBTA63 / MMBTA64  
www.diodes.com  
12

中文翻译

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