5秒后页面跳转
MMBTA64_NL PDF预览

MMBTA64_NL

更新时间: 2024-11-04 21:16:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 光电二极管晶体管
页数 文件大小 规格书
14页 642K
描述
Small Signal Bipolar Transistor, 1.2A I(C), 1-Element, PNP, Silicon, SOT-23, 3 PIN

MMBTA64_NL 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:SOT-23, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.17最大集电极电流 (IC):1.2 A
配置:DARLINGTON最小直流电流增益 (hFE):20000
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):0.225 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):125 MHzBase Number Matches:1

MMBTA64_NL 数据手册

 浏览型号MMBTA64_NL的Datasheet PDF文件第2页浏览型号MMBTA64_NL的Datasheet PDF文件第3页浏览型号MMBTA64_NL的Datasheet PDF文件第4页浏览型号MMBTA64_NL的Datasheet PDF文件第5页浏览型号MMBTA64_NL的Datasheet PDF文件第6页浏览型号MMBTA64_NL的Datasheet PDF文件第7页 
MPSA64  
MMBTA64  
PZTA64  
C
C
E
E
C
B
TO-92  
C
B
SOT-23  
Mark: 2V  
B
SOT-223  
E
PNP Darlington Transistor  
This device is designed for applications requiring extremely high  
current gain at currents to 800 mA. Sourced from Process 61.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCES  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
30  
V
V
V
A
Collector-Base Voltage  
30  
10  
Emitter-Base Voltage  
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
1.2  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
MPSA64  
*MMBTA64  
**PZTA64  
PD  
Total Device Dissipation  
Derate above 25 C  
625  
5.0  
350  
2.8  
1,000  
8.0  
mW  
mW/ C  
°
°
Thermal Resistance, Junction to Case  
83.3  
Rθ  
C/W  
°
JC  
Thermal Resistance, Junction to Ambient  
200  
357  
125  
Rθ  
C/W  
°
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.  
1997 Fairchild Semiconductor Corporation  

与MMBTA64_NL相关器件

型号 品牌 获取价格 描述 数据表
MMBTA64-7 DIODES

获取价格

PNP SURFACE MOUNT DARLINGTON TRANSISTOR
MMBTA64-7-F DIODES

获取价格

PNP SURFACE MOUNT DARLINGTON TRANSISTOR
MMBTA64D87Z TI

获取价格

1200mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBTA64L MOTOROLA

获取价格

500mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-07, 3 PIN
MMBTA64L99Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 1.2A I(C), 1-Element, PNP, Silicon
MMBTA64L99Z TI

获取价格

1200mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBTA64LT1 LRC

获取价格

Darlington Transistors(PNP Silicon)
MMBTA64LT1 MOTOROLA

获取价格

Darlington Transistors
MMBTA64LT1 ONSEMI

获取价格

Darlington Transistors(PNP Silicon)
MMBTA64LT1G ONSEMI

获取价格

Darlington Transistors PNP Silicon