SPICE MODEL: MMBTA63 MMBTA64
Pb
Lead-free
MMBTA63 / MMBTA64
PNP SURFACE MOUNT DARLINGTON TRANSISTOR
Features
·
·
Epitaxial Planar Die Construction
Complementary NPN Types Available
(MMBTA13 /MMBTA14)
SOT-23
A
Dim
A
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
·
·
·
Ideal for Low Power Amplification and Switching
High Current Gain
C
TOP VIEW
B
B
C
Lead Free/RoHS Compliant Version (Note 3)
C
B
E
D
G
D
Mechanical Data
·
E
E
Case: SOT-23
H
G
H
·
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
K
M
J
L
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
D
J
Terminals: Solderable per MIL-STD-202, Method 208
K
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe). Terminal Connections: See Diagram
L
C
M
·
·
·
·
MMBTA63 Marking (See Page 3): K2E, K3E
MMBTA64 Marking (See Page 3): K3E
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approximate)
a
All Dimensions in mm
B
E
@ TA = 25°C unless otherwise specified
Characteristic Symbol
Maximum Ratings
Value
-30
Unit
V
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
-30
V
Emitter-Base Voltage
-10
V
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
-500
mA
mW
°C/W
°C
Pd
300
RqJA
Tj, TSTG
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
417
-55 to +150
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Symbol
Min
Max
Unit
Test Condition
V(BR)CEO
ICBO
IC = -100mA VBE = 0V
VCB = -30V, IE = 0
VEB = -10V, IC = 0
-30
¾
¾
V
-100
-100
nA
nA
IEBO
Emitter Cutoff Current
¾
ON CHARACTERISTICS (Note 2)
DC Current Gain
IC
IC
=
=
-10mA, VCE = -5.0V
-10mA, VCE = -5.0V
5,000
MMBTA63
MMBTA64
MMBTA63
MMBTA64
10,000
10,000
20,000
hFE
¾
¾
I
I
C = -100mA, VCE = -5.0V
C = -100mA, VCE = -5.0V
VCE(SAT)
VBE(SAT)
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
IC = -100mA, IB = -100mA
¾
¾
-1.5
-2.0
V
V
IC = -100mA, VCE = -5.0V
VCE = -5.0V, IC = -10mA,
f = 100MHz
fT
Current Gain-Bandwidth Product
125
¾
MHz
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
DS30055 Rev. 7 - 2
1 of 3
MMBTA63 / MMBTA64
www.diodes.com
ã Diodes Incorporated