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MMBTA64 PDF预览

MMBTA64

更新时间: 2024-11-16 05:49:23
品牌 Logo 应用领域
WEITRON 晶体晶体管达林顿晶体管光电二极管PC
页数 文件大小 规格书
4页 126K
描述
Darlington Transistor PNP Silicon

MMBTA64 数据手册

 浏览型号MMBTA64的Datasheet PDF文件第2页浏览型号MMBTA64的Datasheet PDF文件第3页浏览型号MMBTA64的Datasheet PDF文件第4页 
MMBTA64  
COLLECTOR  
Darlington Transistor  
PNP Silicon  
3
3
1
1
BASE  
2
SOT-23  
2
EMITTER  
MAXIMUM RATINGS (Ta=25 C)  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Symbol  
Value  
-30  
-30  
Unit  
Vdc  
Vdc  
V
CES  
V
CBO  
V
EBO  
Emitter-Base Voltage  
Vdc  
-10  
I
C
mAdc  
Collector Current-Continuous  
-500  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Value  
Unit  
Total Device Dissipation FR-5 Board(1)  
TA =25 C  
mW  
P
225  
D
mW/ C  
C/W  
C
Derate above 25 C  
1.8  
R
Thermal Resistance, Junction Ambient  
θJA  
556  
Junction and Storage, Temperature  
T
Tstg  
-55 to +150  
J,  
Device Marking  
MMBTA63=2U , MMBTA64=2V  
ELECTRICAL CHARACTERISTICS  
Max  
Characteristics  
Symbol  
Min  
Unit  
Vdc  
-
Collector-Emitter Breakdown Voltage(I =-100 uAdc, I =0)  
V
-30  
C
B
(BR)CEO  
-
-
I
uAdc  
uAdc  
-0.1  
-0.1  
Collector Cufoff Current(V =-30Vdc, I =0)  
CBO  
CB  
E
I
EBO  
Emitter Cufoff Current(V =-10Vdc, I =0)  
EB  
C
1. FR-5=1.0 0.75 0.062 in  
_
_
2. Pulse Test: Pulse Width< 300us, Duty Cycle < 2.0%  
WEITRON  
http://www.weitron.com.tw  

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