5秒后页面跳转
MMBTA64 PDF预览

MMBTA64

更新时间: 2024-11-03 22:39:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号双极晶体管达林顿晶体管光电二极管PC
页数 文件大小 规格书
3页 49K
描述
PNP Darlington Transistor

MMBTA64 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.14
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:439826Samacsys Pin Count:3
Samacsys Part Category:Transistor BJT PNPSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:MMBTA64Samacsys Released Date:2016-12-07 16:36:23
Is Samacsys:N最大集电极电流 (IC):1.2 A
配置:DARLINGTON最小直流电流增益 (hFE):20000
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.225 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):125 MHzBase Number Matches:1

MMBTA64 数据手册

 浏览型号MMBTA64的Datasheet PDF文件第2页浏览型号MMBTA64的Datasheet PDF文件第3页 
Discr ete P OWER & Sign a l  
Tech n ologies  
MPSA64  
MMBTA64  
PZTA64  
C
C
E
E
C
B
TO-92  
C
B
SOT-23  
Mark: 2V  
B
SOT-223  
E
PNP Darlington Transistor  
This device is designed for applications requiring extremely high  
current gain at currents to 800 mA. Sourced from Process 61.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCES  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
30  
V
V
V
A
Collector-Base Voltage  
30  
10  
Emitter-Base Voltage  
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
1.2  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
MPSA64  
*MMBTA64  
**PZTA64  
PD  
Total Device Dissipation  
Derate above 25 C  
625  
5.0  
350  
2.8  
1,000  
8.0  
mW  
mW/ C  
°
°
Thermal Resistance, Junction to Case  
83.3  
Rθ  
C/W  
°
JC  
Thermal Resistance, Junction to Ambient  
200  
357  
125  
Rθ  
C/W  
°
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.  
A64, Rev A  
1997 Fairchild Semiconductor Corporation  

MMBTA64 替代型号

型号 品牌 替代类型 描述 数据表
BCV26 FAIRCHILD

类似代替

PNP Darlington Transistor
MMBTA64LT1G ONSEMI

功能相似

Darlington Transistors PNP Silicon
MMBTA64-7-F DIODES

功能相似

PNP SURFACE MOUNT DARLINGTON TRANSISTOR

与MMBTA64相关器件

型号 品牌 获取价格 描述 数据表
MMBTA64_NL FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 1.2A I(C), 1-Element, PNP, Silicon, SOT-23, 3 PIN
MMBTA64-7 DIODES

获取价格

PNP SURFACE MOUNT DARLINGTON TRANSISTOR
MMBTA64-7-F DIODES

获取价格

PNP SURFACE MOUNT DARLINGTON TRANSISTOR
MMBTA64D87Z TI

获取价格

1200mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBTA64L MOTOROLA

获取价格

500mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-07, 3 PIN
MMBTA64L99Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 1.2A I(C), 1-Element, PNP, Silicon
MMBTA64L99Z TI

获取价格

1200mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBTA64LT1 LRC

获取价格

Darlington Transistors(PNP Silicon)
MMBTA64LT1 MOTOROLA

获取价格

Darlington Transistors
MMBTA64LT1 ONSEMI

获取价格

Darlington Transistors(PNP Silicon)