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MMBTA63-TP-HF PDF预览

MMBTA63-TP-HF

更新时间: 2024-11-04 13:11:43
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管达林顿晶体管
页数 文件大小 规格书
3页 152K
描述
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MMBTA63-TP-HF 数据手册

 浏览型号MMBTA63-TP-HF的Datasheet PDF文件第2页浏览型号MMBTA63-TP-HF的Datasheet PDF文件第3页 
M C C  
Micro Commercial Components  
MMBTA63  
MMBTA64  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
This device is designed for applications requiring extremely high  
current gain at 500mA.  
PNP Darlington  
Transistor  
Marking : MMBTA63: 2U  
MMBTA64: 2V  
Case Material:Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL Rating 1  
Maximum Ratings  
SOT-23  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Rating  
Unit  
V
30  
30  
A
V
D
10  
V
C
Collector Current, Continuous  
Operating Junction Temperature  
Storage Temperature  
0.5  
A
TJ  
-55 to +150  
-55 to +150  
OC  
OC  
B
C
TSTG  
E
B
Thermal Characteristics  
Symbol  
F
E
Rating  
Max  
300  
417  
Unit  
mW  
OC/W  
PC  
Collector Power Dissipation*  
RJA  
Thermal Resistance, Junction to Ambient  
G
H
J
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
K
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
DIMENSIONS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
Collector-base breakdown voltage  
Vdc  
Vdc  
Vdc  
INCHES  
MM  
(I =100uAdc, IE=0)  
C
30  
---  
DIM  
A
MIN  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
MAX  
.120  
MIN  
2.80  
2.10  
1.20  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
NOTE  
Collector-emitter breakdown voltage  
B
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
(I =100uAdc, IB=0)  
C
30  
10  
---  
---  
---  
---  
C
D
E
Emitter-base breakdown voltage  
(I =100uAdc, IC=0)  
E
1.78  
.45  
F
I
Collector Cutoff Current  
(VCB=30Vdc, I =0)  
CBO  
G
H
J
.013  
.89  
.100  
1.12  
.180  
.51  
100  
100  
nAdc  
nAdc  
E
IEBO  
Emitter Cutoff Current  
(VEB=10Vdc, I =0)  
.085  
.37  
K
C
ON CHARACTERISTICS  
hFE1  
Suggested Solder  
Pad Layout  
DC Current Gain  
(VCE=5.0Vdc, I =10mAdc)  
C
5000  
10000  
---  
---  
---  
---  
MMBTA63  
MMBTA64  
.031  
.800  
hFE2  
DC Current Gain  
.035  
.900  
(VCE=5.0Vdc, I =100mA)  
C
10000  
20000  
---  
---  
---  
---  
MMBTA63  
MMBTA64  
.079  
2.000  
inches  
mm  
VCE(sat)  
VBE(sat)  
fT  
Collector-Emitter Saturation Voltage  
(I =100mAdc, IB=0.1mAdc)  
---  
---  
1.5  
2.0  
---  
Vdc  
Vdc  
MHz  
C
Base-Emitter On Voltage  
(I =100mAdc, VCE=5.0Vdc)  
C
.037  
.950  
Current-Gain—Bandwidth Product  
.037  
.950  
(I =10mAdc, VCE=5.0Vdc, f=100MHz)  
C
125  
www.mccsemi.com  
1 of 3  
Revision:5  
2008/12/11  

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