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MMBTA63-TP PDF预览

MMBTA63-TP

更新时间: 2024-11-04 20:41:31
品牌 Logo 应用领域
美微科 - MCC 光电二极管晶体管
页数 文件大小 规格书
3页 231K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, LEAD FREE, PLASTIC PACKAGE-3

MMBTA63-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.72
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:30 V
配置:DARLINGTON最小直流电流增益 (hFE):10000
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):125 MHzBase Number Matches:1

MMBTA63-TP 数据手册

 浏览型号MMBTA63-TP的Datasheet PDF文件第2页浏览型号MMBTA63-TP的Datasheet PDF文件第3页 
M C C  
Micro Commercial Components  
MMBTA63  
MMBTA64  
TM  
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Features  
·
Halogen free available upon request by adding suffix "-HF"  
This device is designed for applications requiring extremely high  
current gain at 500mA.  
PNP Darlington  
Transistor  
Marking : MMBTA63: 2U  
MMBTA64: 2V  
Case Material:Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL Rating 1  
Maximum Ratings  
SOT-23  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Rating  
Unit  
V
30  
30  
A
V
D
10  
V
C
Collector Current, Continuous  
Operating Junction Temperature  
Storage Temperature  
0.5  
A
TJ  
-55 to +150  
-55 to +150  
OC  
OC  
B
C
TSTG  
E
B
Thermal Characteristics  
Symbol  
F
E
Rating  
Max  
300  
417  
Unit  
mW  
OC/W  
PC  
Collector Power Dissipation*  
RJA  
Thermal Resistance, Junction to Ambient  
G
H
J
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
K
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
DIMENSIONS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
Collector-base breakdown voltage  
Vdc  
Vdc  
Vdc  
INCHES  
MAX  
.120  
MM  
(I =100uAdc, IE=0)  
C
30  
30  
10  
---  
---  
---  
---  
DIM  
A
MIN  
MIN  
2.80  
2.10  
1.20  
MAX  
3.04  
2.64  
1.40  
NOTE  
Collector-emitter breakdown voltage  
.110  
.083  
.047  
B
.104  
.055  
(I =100uAdc, IB=0)  
C
C
Emitter-base breakdown voltage  
D
.035  
.041  
.89  
1.03  
(I =100uAdc, IC=0)  
E
---  
E
F
.070  
.018  
.0005  
.035  
.003  
.015  
.081  
.024  
.0039  
.044  
.007  
.020  
1.78  
.45  
2.05  
.60  
I
Collector Cutoff Current  
(VCB=30Vdc, I =0)  
CBO  
G
H
J
.013  
.89  
.100  
1.12  
.180  
.51  
100  
100  
nAdc  
nAdc  
E
IEBO  
Emitter Cutoff Current  
(VEB=10Vdc, I =0)  
.085  
.37  
K
C
ON CHARACTERISTICS  
hFE1  
Suggested Solder  
Pad Layout  
DC Current Gain  
(VCE=5.0Vdc, I =10mAdc)  
C
5000  
10000  
---  
---  
---  
---  
MMBTA63  
MMBTA64  
.031  
.800  
hFE2  
DC Current Gain  
.035  
.900  
(VCE=5.0Vdc, I =100mA)  
C
10000  
20000  
---  
---  
---  
---  
MMBTA63  
MMBTA64  
.079  
2.000  
inches  
mm  
VCE(sat)  
VBE(sat)  
fT  
Collector-Emitter Saturation Voltage  
(I =100mAdc, IB=0.1mAdc)  
---  
---  
1.5  
2.0  
---  
Vdc  
Vdc  
MHz  
C
Base-Emitter On Voltage  
(I =100mAdc, VCE=5.0Vdc)  
C
.037  
.950  
Current-Gain—Bandwidth Product  
.037  
.950  
(I =10mAdc, VCE=5.0Vdc, f=100MHz)  
C
125  
www.mccsemi.com  
1 of 3  
Revision:A  
2013/01/01  

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