Datasheet > MMBTA63

MMBTA63

更新时间： 2024-11-19 18:09:27

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	336K
描述
SOT-23

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中文翻译

获取价格

数据手册

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MMBTA63 数据手册

MMBTA63

DARLINGTON TRANSISTOR (PNP)

FEATURES

 Complementary to MMBTA13

 High Current Gain

 Ideal for Medium Power Amplification and Switching

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

Value

-30

Unit

Collector-Base Voltage

V_CEO

Collector-Emitter Voltage

Emitter-Base Voltage

-30

V_EBO

-10

Collector Current

-500

300

°C/W

°C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

417

150

Storage Temperature

TSTG

-55 ~+150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

Parameter

Min

-30

-10

Typ Max Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= -100μA，I_E=0

I_C= -100μA，I_B=0

I = -100μA I =0

，

I_CBO

I_EBO

-0.1

uA V_CB= -30V, I_E=0

uA V_EB= -10V, I_C=0

V_CE= -5V, I_C= -10mA

Emitter cut-off current

h_FE1

5000

DC current gain

V_CE= -5V, I_C= -100mA

I_C= -100mA，I_B= -0.1mA

I_C= -100mA，V_CE= -5V

V_CE= -5V,I_C= -10mA,f=1

h_FE2

10000

Collector-emitter saturation voltage

V_CE(sat)

V_BE

-1.5

-2

Base-emitter voltage

Transition frequency

f_T

125

MHz

*Pulse test: pulse width≤300μs,duty cycle≤2%.

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