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MMBTA63 PDF预览

MMBTA63

更新时间: 2024-11-05 18:09:27
品牌 Logo 应用领域
合科泰 - HOTTECH /
页数 文件大小 规格书
4页 336K
描述
SOT-23

MMBTA63 数据手册

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MMBTA63  
DARLINGTON TRANSISTOR (PNP)  
FEATURES  
Complementary to MMBTA13  
High Current Gain  
Ideal for Medium Power Amplification and Switching  
Surface Mount device  
SOT-23  
MECHANICAL DATA  
Case: SOT-23  
Case Material: Molded Plastic. UL flammability  
Classification Rating: 94V-0  
Weight: 0.008 grams (approximate)  
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
VCBO  
Value  
-30  
Unit  
V
Collector-Base Voltage  
VCEO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-30  
V
VEBO  
-10  
V
Collector Current  
IC  
-500  
300  
mA  
mW  
°C/W  
°C  
Collector Power Dissipation  
PC  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
RθJA  
TJ  
417  
150  
Storage Temperature  
TSTG  
-55 ~+150  
°C  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
Parameter  
Min  
-30  
-30  
-10  
Typ Max Unit  
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
V
IC= -100μAIE=0  
IC= -100μAIB=0  
I = -100μA I =0  
E
C
ICBO  
IEBO  
-0.1  
-0.1  
uA VCB= -30V, IE=0  
uA VEB= -10V, IC=0  
VCE= -5V, IC= -10mA  
Emitter cut-off current  
hFE1  
5000  
DC current gain  
VCE= -5V, IC= -100mA  
IC= -100mAIB= -0.1mA  
IC= -100mAVCE= -5V  
VCE= -5V,IC= -10mA,f=1  
hFE2  
10000  
Collector-emitter saturation voltage  
VCE(sat)  
VBE  
-1.5  
-2  
V
V
Base-emitter voltage  
Transition frequency  
fT  
125  
MHz  
MHz  
*Pulse test: pulse width≤300μs,duty cycle≤2%.  
1 / 4  
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD  
E-mail:hkt@heketai.com  

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