MMBTA63LT1G,
MMBTA64LT1G
Darlington Transistors
PNP Silicon
http://onsemi.com
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
COLLECTOR 3
Compliant
BASE
1
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
−30
Unit
Vdc
EMITTER 2
V
CES
CBO
EBO
3
V
V
−30
Vdc
−10
Vdc
1
2
Collector Current − Continuous
I
C
−500
mAdc
SOT−23 (TO−236)
CASE 318
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
STYLE 6
Total Device Dissipation FR−5 Board,
P
D
(Note 1) T = 25°C
225
1.8
mW
mW/°C
MARKING DIAGRAM
A
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
R
556
°C/W
q
JA
2x M G
Total Device Dissipation
P
D
G
Alumina Substrate, (Note 2)
1
T = 25°C
300
2.4
mW
mW/°C
A
Derate above 25°C
2x = Device Code
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R
417
°C/W
°C
q
JA
x = U for MMBTA63LT1
x = V for MMBTA64LT1
T , T
J
−55 to +150
stg
M
G
= Date Code*
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBTA63LT1G
SOT−23 3,000 / Tape & Reel
(Pb−Free)
MMBTA64LT1G
SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
August, 2009 − Rev. 4
MMBTA63LT1/D