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MMBTA63 PDF预览

MMBTA63

更新时间: 2024-11-18 04:09:31
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical 晶体晶体管
页数 文件大小 规格书
3页 143K
描述
PNP General Purpose Transistor

MMBTA63 数据手册

 浏览型号MMBTA63的Datasheet PDF文件第2页浏览型号MMBTA63的Datasheet PDF文件第3页 
BL Galaxy Electrical  
Production specification  
PNP General Purpose Transistor  
MMBTA63/MMBTA64  
FEATURES  
Pb  
Lead-free  
z
Epitaxial planar die construction.  
Complementary NPN type available  
(MMBTA13/MMBTA14).  
z
z
High current gain.  
APPLICATIONS  
z
Ideal for medium power amplification and switching  
SOT-23  
ORDERING INFORMATION  
Type No.  
Marking  
Package Code  
MMBTA63  
MMBTA64  
2U  
2V  
SOT-23  
SOT-23  
MAXIMUM RATING @ Ta=25unless otherwise specified  
Symbol  
Parameter  
collector-base voltage  
Value  
UNIT  
MMBTA63  
MMBTA64  
MMBTA63  
MMBTA64  
-30  
-30  
-30  
-30  
VCBO  
V
collector-emitter voltage  
VCEO  
V
VEBO  
IC  
emitter-base voltage  
collector current (DC)  
Collector dissipation  
-10  
-0.3  
V
A
PC  
0.35  
W
RθJA  
Tj ,Tstg  
Thermal Resistance, Junction to Ambient  
junction and storage temperature  
357  
°C/W  
°C  
-55-150  
Document number: BL/SSSTC124  
Rev.A  
www.galaxycn.com  
1

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