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MMBTA63_2

更新时间： 2024-11-18 10:52:23
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管达林顿晶体管
页数 文件大小 规格书
3页 104K
描述
PNP SURFACE MOUNT DARLINGTON TRANSISTOR

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中文翻译

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MMBTA63_2 数据手册

 浏览型号MMBTA63_2的Datasheet PDF文件第2页浏览型号MMBTA63_2的Datasheet PDF文件第3页 
MMBTA63 / MMBTA64  
PNP SURFACE MOUNT DARLINGTON TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
•
•
Epitaxial Planar Die Construction  
Complementary NPN Types Available  
(MMBTA13 /MMBTA14)  
A
C
SOT-23  
Dim  
A
B
C
D
E
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.085  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.180  
8°  
•
•
•
Ideal for Low Power Amplification and Switching  
High Current Gain  
Lead, Halogen and Antimony Free, RoHS Compliant  
"Green" Device (Notes 3 and 4)  
TOP VIEW  
B
C
B
E
D
G
E
Mechanical Data  
•
•
H
Case: SOT-23  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals: Solderable per MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe). Terminal Connections: See Diagram  
MMBTA63 Marking K2E, K3E See Page 3  
MMBTA64 Marking K3E See Page 3  
Ordering & Date Code Information: See Page 3  
Weight: 0.008 grams (approximate)  
G
H
J
K
M
J
L
D
•
•
•
K
L
C
M
•
•
•
•
α
All Dimensions in mm  
E
B
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-30  
Unit  
V
Collector-Emitter Voltage  
-30  
V
Emitter-Base Voltage  
-10  
V
Collector Current - Continuous  
Power Dissipation  
(Note 1)  
(Note 1)  
(Note 1)  
-500  
mA  
mW  
300  
PD  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
417  
°C/W  
°C  
Rθ  
JA  
-55 to +150  
TJ, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 2)  
Symbol  
Min  
Max  
Unit  
Test Condition  
Collector-Emitter Breakdown Voltage  
Collector Cutoff Current  
-30  
⎯
V
V(BR)CEO  
ICBO  
⎯
IC = -100μA VBE = 0V  
-100  
-100  
nA  
nA  
VCB = -30V, IE = 0  
VEB = -10V, IC = 0  
Emitter Cutoff Current  
IEBO  
⎯
ON CHARACTERISTICS (Note 2)  
IC  
IC  
=
=
-10mA, VCE = -5.0V  
-10mA, VCE = -5.0V  
DC Current Gain  
MMBTA63  
MMBTA64  
MMBTA63  
MMBTA64  
5,000  
10,000  
10,000  
20,000  
hFE  
⎯
⎯
IC = -100mA, VCE = -5.0V  
IC = -100mA, VCE = -5.0V  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
-1.5  
-2.0  
V
V
VCE(SAT)  
VBE(SAT)  
⎯
⎯
IC = -100mA, IB = -100μA  
IC = -100mA, VCE = -5.0V  
SMALL SIGNAL CHARACTERISTICS  
VCE = -5.0V, IC = -10mA,  
f = 100MHz  
Current Gain-Bandwidth Product  
125  
MHz  
fT  
⎯
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,  
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration pulse test used to minimize self-heating effect  
3. No purposefully added lead. Halogen and Antimony Free.  
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
DS30055 Rev. 8 - 2  
1 of 3  
MMBTA63 / MMBTA64  
© Diodes Incorporated  
www.diodes.com  
123

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