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MMBTA63LT1G PDF预览

MMBTA63LT1G

更新时间: 2024-11-04 04:01:03
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管达林顿晶体管光电二极管
页数 文件大小 规格书
4页 61K
描述
Darlington Transistors PNP Silicon

MMBTA63LT1G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
Factory Lead Time:1 week风险等级:0.77
Is Samacsys:N最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:30 V配置:DARLINGTON
最小直流电流增益 (hFE):10000JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):0.225 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
标称过渡频率 (fT):125 MHzBase Number Matches:1

MMBTA63LT1G 数据手册

 浏览型号MMBTA63LT1G的Datasheet PDF文件第2页浏览型号MMBTA63LT1G的Datasheet PDF文件第3页浏览型号MMBTA63LT1G的Datasheet PDF文件第4页 
MMBTA63LT1,  
MMBTA64LT1  
MMBTA64LT1 is a Preferred Device  
Darlington Transistors  
PNP Silicon  
http://onsemi.com  
Features  
Pb−Free Packages are Available  
COLLECTOR 3  
BASE  
1
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
−30  
Unit  
Vdc  
EMITTER 2  
V
CES  
CBO  
EBO  
V
V
−30  
Vdc  
3
−10  
Vdc  
1
Collector Current − Continuous  
I
−500  
mAdc  
C
2
THERMAL CHARACTERISTICS  
SOT−23 (TO−236)  
CASE 318  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR−5 Board,  
P
STYLE 6  
D
(Note 1) T = 25°C  
225  
1.8  
mW  
mW/°C  
A
Derate above 25°C  
MARKING DIAGRAM  
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
556  
°C/W  
Total Device Dissipation  
P
D
Alumina Substrate, (Note 2)  
2x M G  
T = 25°C  
300  
2.4  
mW  
mW/°C  
A
G
Derate above 25°C  
1
Thermal Resistance, Junction−to−Ambient  
Junction and Storage Temperature  
R
417  
°C/W  
°C  
q
JA  
T , T  
J
−55 to +150  
stg  
2x = Device Code  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. FR−5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
x = U for MMBTA63LT1  
x = V for MMBTA64LT1  
M
= Date Code*  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBTA63LT1  
SOT−23 3,000 / Tape & Reel  
MMBTA63LT1G  
SOT−23 3,000 / Tape & Reel  
(Pb−Free)  
MMBTA64LT1  
SOT−23 3,000 / Tape & Reel  
MMBTA64LT1G  
SOT−23 3,000 / Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 2  
MMBTA63LT1/D  
 

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完全替代

Darlington Transistors(PNP Silicon)
MMBTA63 ONSEMI

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