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MMBTA63LT1 PDF预览

MMBTA63LT1

更新时间: 2024-11-17 22:14:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管达林顿晶体管
页数 文件大小 规格书
4页 73K
描述
Darlington Transistors(PNP Silicon)

MMBTA63LT1 技术参数

是否无铅: 含铅生命周期:End Of Life
零件包装代码:TO-236AF包装说明:CASE 318-08, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.24Is Samacsys:N
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:30 V
配置:DARLINGTON最小直流电流增益 (hFE):10000
JEDEC-95代码:TO-236AFJESD-30 代码:R-PDSO-G3
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240极性/信道类型:PNP
最大功率耗散 (Abs):0.225 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管元件材料:SILICON标称过渡频率 (fT):125 MHz
Base Number Matches:1

MMBTA63LT1 数据手册

 浏览型号MMBTA63LT1的Datasheet PDF文件第2页浏览型号MMBTA63LT1的Datasheet PDF文件第3页浏览型号MMBTA63LT1的Datasheet PDF文件第4页 
ON Semiconductort  
Darlington Transistors  
PNP Silicon  
MMBTA63LT1  
MMBTA64LT1  
MMBTA64LT1 is a Preferred Device  
MAXIMUM RATINGS  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Value  
–30  
Unit  
Vdc  
V
CES  
CBO  
EBO  
3
V
V
–30  
Vdc  
–10  
Vdc  
1
Collector Current – Continuous  
I
C
–500  
mAdc  
2
DEVICE MARKING  
MMBTA63LT1 = 2U; MMBTA64LT1 = 2V  
CASE 318–08, STYLE 6  
SOT–23 (TO–236AF)  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
(1)  
Total Device Dissipation FR–5 Board,  
P
225  
mW  
D
T
= 25°C  
A
Derate above 25°C  
1.8  
556  
300  
mW/°C  
°C/W  
mW  
COLLECTOR 3  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R
qJA  
BASE  
1
P
D
(2)  
Alumina Substrate,  
T
A
= 25°C  
Derate above 25°C  
2.4  
417  
mW/°C  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
R
EMITTER 2  
qJA  
T , T  
J stg  
–55 to +150  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage (I = –100 µAdc)  
V
–30  
Vdc  
nAdc  
nAdc  
C
(BR)CEO  
Collector Cutoff Current (V  
= –30 Vdc)  
= –10 Vdc)  
I
–100  
–100  
CB  
CBO  
Emitter Cutoff Current (V  
I
EB  
EBO  
ON CHARACTERISTICS  
(3)  
DC Current Gain  
(I = –10 mAdc, V  
h
FE  
= –5.0 Vdc)  
= –5.0 Vdc)  
MMBTA63  
MMBTA64  
MMBTA63  
MMBTA64  
5,000  
10,000  
10,000  
20,000  
C
CE  
CE  
(I = –10 mAdc, V  
(I = –100 mAdc, V  
(I = –100 mAdc, V  
C
C
C
= –5.0 Vdc)  
= –5.0 Vdc)  
CE  
CE  
Collector–Emitter Saturation Voltage (I = –100 mAdc, I = –0.1 mAdc)  
V
CE(sat)  
–1.5  
–2.0  
Vdc  
Vdc  
C
B
Base–Emitter On Voltage (I = –100 mAdc, V  
C
= –5.0 Vdc)  
V
BE(on)  
CE  
SMALL–SIGNAL CHARACTERISTICS  
Current–Gain – Bandwidth Product (I = –10 mAdc, V  
C
= –5.0 Vdc, f = 100 MHz)  
f
T
125  
MHz  
CE  
1. FR–5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
3. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.  
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
March, 2001 – Rev. 1  
MMBTA63LT1/D  

MMBTA63LT1 替代型号

型号 品牌 替代类型 描述 数据表
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完全替代

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