Datasheet > MMBTA63_08

MMBTA63_08

更新时间： 2024-11-18 10:52:23

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
2页	39K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

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中文翻译

获取价格

数据手册

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MMBTA63_08 数据手册

SEMICONDUCTOR

MMBTA63/64

EPITAXIAL PLANAR PNP TRANSISTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

DARLINGTON TRANSISTOR.

DIM MILLIMETERS

2.93 0.20

1.30+0.20/-0.15

1.30 MAX

0.45+0.15/-0.05

2.40+0.30/-0.20

1.90

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

SYMBOL RATING

UNIT

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

Collector-Base

V_CBO

-30

MMBTA63/64

Voltage

0.20 MIN

1.00+0.20/-0.10

Collector-Emitter

Voltage

V_CES

-30

V_EBO

I_C

Emitter-Base Voltage

-10

-500

-1

1. EMITTER

2. BASE

Collector Current

I_CP

Pulse

3. COLLECTOR

P_C*

T_j

Collector Power Dissipation

Junction Temperature

350

150

T_stg

Storage Temperature Range

-55 150

SOT-23

* : Package Mounted On 99.5% Alumina 10

0.6mm.

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

SYMBOL

V_(BR)CES

I_CBO

TEST CONDITION

MIN.

-30

TYP.

MAX.

UNIT

I_C=-0.1mA, I_B=0

V_CB=-30V, I_E=0

V_EB=-10V, I_C=0

-0.1

I_EBO

-0.1

MMBTA63

5,000

10,000

20,000

h_FE(1)

h_FE(2)

I_C=-10mA, V_CE=-5V

I_C=-100mA, V_CE=-5V

MMBTA64

DC Current Gain

MMBTA63

MMBTA64

Collector-Emitter

MMBTA63/64

V_CE(sat)

V_BE

f_T

I_C=-100mA, I_B=-0.1mA

I_C=-100mA, V_CE=-5V

-1.5

-2.0

Saturation Voltage

Base Emitter

MMBTA63/64

Voltage

I_C=-10mA, f=100MHz

V_CE=-5V

Current Gain

MMBTA63/64

Bandwith Product

125

MHz

*Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%

Marking

MARK SPEC

Lot No.

TYPE

MMBTA63

AGX

MMBTA64

AFX

Type Name

A X

MARK

2008. 8. 29

Revision No : 5

1/2

中文翻译

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