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MMBTA63_1

更新时间： 2024-11-21 04:01:03
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管达林顿晶体管
页数 文件大小 规格书
3页 71K
描述
PNP SURFACE MOUNT DARLINGTON TRANSISTOR

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中文翻译

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MMBTA63_1 数据手册

 浏览型号MMBTA63_1的Datasheet PDF文件第2页浏览型号MMBTA63_1的Datasheet PDF文件第3页 
SPICE MODEL: MMBTA63 MMBTA64  
Pb  
Lead-free  
MMBTA63 / MMBTA64  
PNP SURFACE MOUNT DARLINGTON TRANSISTOR  
Features  
·
·
Epitaxial Planar Die Construction  
Complementary NPN Types Available  
(MMBTA13 /MMBTA14)  
SOT-23  
A
Dim  
A
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.085  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.180  
8°  
·
·
·
Ideal for Low Power Amplification and Switching  
High Current Gain  
C
TOP VIEW  
B
B
C
Lead Free/RoHS Compliant Version (Note 3)  
C
B
E
D
G
D
Mechanical Data  
·
E
E
Case: SOT-23  
H
G
H
·
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
K
M
J
L
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
D
J
Terminals: Solderable per MIL-STD-202, Method 208  
K
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe). Terminal Connections: See Diagram  
L
C
M
·
·
·
·
MMBTA63 Marking (See Page 3): K2E, K3E  
MMBTA64 Marking (See Page 3): K3E  
Ordering & Date Code Information: See Page 3  
Weight: 0.008 grams (approximate)  
a
All Dimensions in mm  
B
E
@ TA = 25°C unless otherwise specified  
Characteristic Symbol  
Maximum Ratings  
Value  
-30  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
-30  
V
Emitter-Base Voltage  
-10  
V
Collector Current - Continuous (Note 1)  
Power Dissipation (Note 1)  
-500  
mA  
mW  
°C/W  
°C  
Pd  
300  
RqJA  
Tj, TSTG  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage and Temperature Range  
417  
-55 to +150  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
OFF CHARACTERISTICS (Note 2)  
Collector-Emitter Breakdown Voltage  
Collector Cutoff Current  
Symbol  
Min  
Max  
Unit  
Test Condition  
V(BR)CEO  
ICBO  
IC = -100mA VBE = 0V  
VCB = -30V, IE = 0  
VEB = -10V, IC = 0  
-30  
¾
¾
V
-100  
-100  
nA  
nA  
IEBO  
Emitter Cutoff Current  
¾
ON CHARACTERISTICS (Note 2)  
DC Current Gain  
IC  
IC  
=
=
-10mA, VCE = -5.0V  
-10mA, VCE = -5.0V  
5,000  
MMBTA63  
MMBTA64  
MMBTA63  
MMBTA64  
10,000  
10,000  
20,000  
hFE  
¾
¾
I
I
C = -100mA, VCE = -5.0V  
C = -100mA, VCE = -5.0V  
VCE(SAT)  
VBE(SAT)  
Collector-Emitter Saturation Voltage  
Base- Emitter Saturation Voltage  
SMALL SIGNAL CHARACTERISTICS  
IC = -100mA, IB = -100mA  
¾
¾
-1.5  
-2.0  
V
V
IC = -100mA, VCE = -5.0V  
VCE = -5.0V, IC = -10mA,  
f = 100MHz  
fT  
Current Gain-Bandwidth Product  
125  
¾
MHz  
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,  
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration pulse test used to minimize self-heating effect.  
3. No purposefully added lead.  
DS30055 Rev. 7 - 2  
1 of 3  
MMBTA63 / MMBTA64  
www.diodes.com  
ã Diodes Incorporated  
123

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