MMBT5087LT3

更新时间： 2024-11-17 22:27:55

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管光电二极管
页数	文件大小	规格书
8页	409K
描述
Low Noise Transistor

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中文翻译

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数据手册

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MMBT5087LT3 数据手册

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by MMBT5087LT1/D

SEMICONDUCTOR TECHNICAL DATA

COLLECTOR

PNP Silicon

Motorola Preferred Device

BASE

EMITTER

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Symbol

Value

–50

Unit

Vdc

CEO

CBO

EBO

Collector–Base Voltage

Emitter–Base Voltage

–50

Vdc

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

–3.0

–50

Vdc

Collector Current — Continuous

DEVICE MARKING

mAdc

MMBT5087LT1 = 2Q

THERMAL CHARACTERISTICS

Characteristic

(1)

Symbol

Max

Unit

Total Device Dissipation FR-5 Board

= 25°C

Derate above 25°C

225

1.8

556

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

θJA

(2)

Alumina Substrate,

T = 25°C

Derate above 25°C

2.4

417

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

θJA

T , T

–55 to +150

stg

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Collector–Emitter Breakdown Voltage

–50

—

Vdc

(BR)CEO

(I = –1.0 mAdc, I = 0)

Collector–Base Breakdown Voltage

(I = –100 µAdc, I = 0)

(BR)CBO

Collector Cutoff Current

nAdc

CBO

= –10 Vdc, I = 0)

—

–10

–50

= –35 Vdc, I = 0)

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

M_Mot_oo_tor_ro_ol_la_a,S_Inm_{c. 1}a₉ll₉–₆Signal Transistors, FETs and Diodes Device Data

12 3 4 5 6 7 8

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