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MMBT5088 PDF预览

MMBT5088

更新时间: 2024-11-19 11:12:59
品牌 Logo 应用领域
安森美 - ONSEMI 放大器光电二极管晶体管
页数 文件大小 规格书
8页 279K
描述
NPN 通用放大器

MMBT5088 技术参数

是否无铅: 不含铅生命周期:End Of Life
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:1 week风险等级:5.51
Is Samacsys:N其他特性:LOW NOISE
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):300
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.225 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

MMBT5088 数据手册

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MMBT5088 替代型号

型号 品牌 替代类型 描述 数据表
MMBT5088LT1G ONSEMI

类似代替

Low Noise Transistors NPN Silicon
MMBT5088 FAIRCHILD

类似代替

NPN General Purpose Amplifier
MMBT5088LT1 ONSEMI

类似代替

Low Noise Transistors

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Low Noise Transistors(NPN Silicon)